Advanced Micro Devices Corporation

Roger Thomas Williams

Mark Brandon Fuselier

Michael Verne Fenske

Michael James Dunn

Stephen Doug Ray

A method and an apparatus for measuring insulating film thickness, such as the width of sidewall spacers. The method includes positioning a first test structure having a first resistance at a first location on a semiconductor wafer and positioning a second test structure having a second resistance different from the first resistance at a second location on the semiconductor wafer. The method also includes measuring the first resistance of the first test structure and measuring the second resistance of the second test structure. The method also includes determining an average characteristic of the first test structure and the second test structure, other than resistance, based on the first resistance of the first test structure and the second resistance of the second test structure.

Method and apparatus for electrically measuring insulating film thickness

An apparatus and method for detecting speed variations across a die, a flash field, i.e., multiple dies, and multiple flash fields. In one embodiment, a method comprises the step of inserting a plurality of functional circuits at strategic locations across a die or flash field or multiple flash fields where each of the plurality of functional circuits generates data, e.g., values, frequency, etc., correlated to the die speeds at the strategic locations. The method further comprises reading the data generated by the plurality of functional circuits that may be correlated to the die speeds at the strategic locations. Speed variations across the die or flash field or multiple flash fields may then be subsequently detected based on the data generated by the plurality of functional circuits. Upon analyzing the data generated by the plurality of functional circuits, adjustments may be made to the manufacturing process to improve the number of acceptable integrated circuits or chips disposed in the dies.

Detecting die speed variations

A method for electrically quantifying a semiconductor device's spacers' width. In one embodiment, a method comprises the step of measuring a resistance across a region of interest of each of a plurality of semiconductor structures including the semiconductor device in question, where the region of interest may be a source or drain region of the semiconductor structure or may be one of a plurality of lightly doped drain regions of the semiconductor structure. The method further comprises determining a width of one of a plurality of lightly doped drain regions of the semiconductor device from the resistance across the region of interest of each of the plurality of semiconductor structures. The method further comprises determining the semiconductor device's spacers' width from the width of one of the plurality of lightly doped drain regions of the semiconductor device.

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Galveston, TX, United States of America

Roger Thomas Williams