Lam Research Corporation

I Am Research Corporation

Roger Patrick

Alexei Marakhtanov

Michael C Kellogg

Gregory R Bettencourt

Raj Dhindsa

Greg Bettencourt

Vincent M Wong

Phillip Lawrence Jones

Norman Williams

Chung Ho Huang

Randall Hardin

Duane Lytle

Jon Keihl

Shannon Spencer

John Pegg

George Diercks

Lee Chen

Alan M Schoepp

Anthony De La Llera

Brett C Richardson

Thomas W Anderson

Clint Thomas

Stanley Chan Siu

Pratik Mankidy

Yun-Yen Jack Yang

Neil M P Benjamin

Wen-Ben Chou

Neal K Newton

Robert Ahrens

Simon Gosselin

Ronald Ramnarine

Mukesh Shah

Rajlnder Dhindsa

Luisarita Atzei

Kerwin Hoversten

Marco Mora

Kambiz Fallahpour

Sang Heon Song

An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.

Compact high density plasma source

Integration of semiconductor tool maintenance operations on mobile devices to allow technicians to more accurately perform semiconductor tool maintenance and to allow more accurate analysis of data to improve maintenance procedures to be more repeatable, consistent, and efficient. Remote control of maintenance operations for the semiconductor tool via a portable electronic device decreases the time required to service semiconductor tools and thus increase throughput.

Mobile connectivity and control of semiconductor manufacturing equipment

Apparatus and methods for diagnosing status of a consumable part of a plasma reaction chamber, the consumable part including at least one conductive element embedded therein. The method includes the steps of: coupling the conductive element to a power supply so that a bias potential relative to the ground is applied to the conductive element; exposing the consumable part to plasma erosion until the conductive element draws a current from the plasma upon exposure of the conductive element to the plasma; measuring the current; and evaluating a degree of erosion of the consumable part due to the plasma based on the measured current.

Method and apparatus for diagnosing status of parts in real time in plasma processing equipment

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

Clamped monolithic showerhead electrode

A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode.

Cam-locked showerhead electrode and assembly

A silicon-based showerhead electrode is provided that can include a backside, a frontside, and a plurality of showerhead passages extending from the backside of the silicon-based showerhead electrode to the frontside of the silicon-based showerhead electrode. The silicon-based showerhead electrode can comprise single crystal silicon. The silicon-based showerhead electrode may further include a plurality of partial recesses formed within the single crystal silicon along the backside of the silicon-based showerhead electrode. The plurality of partial recesses can leave a thickness of single crystal silicon between each of the partial recesses and the frontside of the silicon-based showerhead electrode.

Showerhead electrodes

The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, a thermally conductive gasket, and a plurality of o-rings, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a thermal interface. The thermally conductive gasket and the o-rings are positioned along this thermal interface with the o-rings separating the thermally conductive gasket from the showerhead passages such that the gasket is isolated from the showerhead passages. The gasket may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.

Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings

The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and a thermally conductive gasket, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a disjointed thermal interface comprising portions proximal to showerhead passages of the showerhead electrode and portions displaced from the showerhead passages. The displaced portions are recessed relative to the proximal portions and are separated from the showerhead passages by the proximal portions of the thermal interface. The gasket is positioned along the displaced portions such that the gasket is isolated from the showerhead passages and may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.

Electrode assembly and plasma processing chamber utilizing thermally conductive gasket

The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware, wherein the silicon-based showerhead electrode comprises a plurality of partial recesses formed in the backside of the silicon-based showerhead electrode and backside inserts positioned in the partial recesses. The thermal control plate comprises securing hardware passages configured to permit securing hardware to access the backside inserts. The securing hardware and the backside inserts are configured to maintain engagement of the thermal control plate and the silicon-based showerhead electrode and to permit disengagement of the thermal control plate and the silicon-based showerhead electrode while isolating the silicon-based electrode material of the silicon-based showerhead electrode from frictional contact with the securing hardware during disengagement.

Showerhead electrode assemblies and plasma processing chambers incorporating the same

A method of optimizing a set of steps in a semi-conductor processing system comprising a software control program, wherein the semi-conductor processing system includes a first function, a second function, and a third function, and further includes a memory for storing a set of variables, and wherein the set of steps further includes a first step, a second step, and a third step. The invention includes generating the first step on an editor application, wherein the first function is added to the first step, and if required, a first set of user input instructions is added. The invention also includes generating the second step on the editor application, wherein the second function is added to the second step, and if required, a second set of user input instructions is added; and generating the third step on the editor application, wherein the third function is added to the third step, and if required, a third set of user input instructions is added. The invention further includes placing the first step, the second step, and the third step in a proper order; transferring the set of steps to the semi-conductor processing system; executing the set of steps; storing a set of results in the set of variables; and, if required, generating a report from the set of variables.

Architecture for general purpose programmable semiconductor processing system and methods therefor

An arrangement for processing a semiconductor substrate in a plasma processing system is disclosed. The arrangement includes providing a RF coupling structure having a first terminal and a second terminal, the first terminal being coupled with a first electrical measuring device, the second terminal being coupled with a second electrical measuring device. The arrangement also includes coupling a compensating circuit to the second terminal. The arrangement further includes providing a feedback circuit coupled to receive information from the first electrical measuring device and the second electrical measuring device, an output of the feedback circuit being employed to control the compensating circuit in order to keep a ratio between a first electrical value at the first terminal and a second electrical value at the second terminal substantially at a predefined value.

Methods and apparatus for optimizing a substrate in a plasma processing system

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Mountain View, CA, United States of America

Roger Patrick