Honeywell International Inc.

Roger Leung

Kreisler S Lau

Songyuan Xie

Nancy E Iwamoto

Victor Y Lu

Nigel P Hacker

Boris Korolev

Shyama P Mukherjee

Feng Quan Liu

Denis H Endisch

Emma Brouk

Bo Li

Paul G Apen

Anil Shriram Bhanap

Yanpei Deng

Michael D Goodner

Teresa A Ramos

Makarem A Hussein

Lorenza Moro

Joseph T Kennedy

Tian-An Chen

William B Bedwell

Ananth Naman

Eric Chen Deng

Jan Nedbal

Mark A Fradkin

Rusian Zherebin

David Nalewajek

Hui-Jung Wu

Ruslan Zherebin

Robert Richard Roth

Brian J Daniels

Wenya Fan

John G Sikonia

John Silkonia

David Schaefer

Beth C Munoz

An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

Antireflective coatings for via fill and photolithography applications and methods of preparation thereof

A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

Method for making toughening agent materials

An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film.

A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent which may be an acid, a base, an onium compound, a dehydrating agent, and combinations thereof, and a solvent or mixture of a main solvent and a co-solvent.

Treating agent materials

A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.

Repairing damage to low-k dielectric materials using silylating agents

The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.

Low metal porous silica dielectric for integral circuit applications

Porogens for porous silica dielectric for integral circuit applications

The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer. In yet another aspect of the inventive subject matter, spin-on low dielectric constant materials are formed having a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbone are crosslinked via the first and second reactive groups in a crosslinking reaction preferably without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.

Low dielectric constant materials and methods of preparation thereof

A method of producing a nanoporous silica dielectric film having improved mechanical strength. A composition is formed which comprises in admixture a porogen, a solvent, a catalyst and a combination of silicon containing pre-polymers.

Hybrid inorganic/organic low k dielectric films with improved mechanical strength

The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [YSiO][ZSiO][HSiO]where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.

Organosiloxanes

A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

Colloidal silica composite films for premetal dielectric applications

The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [YSiO]{ZSiO][HSiO](where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.

In accordance with the present invention, compositions and methods are provided in which the mechanical strength and durability of a precursor material having a plurality of pores is increased by a) providing a precursor material; b) treating the precursor material to form a nanoporous aerogel, preferably by using a supercritical drying process; c) providing a blending material having a reinforcing component and a volatile component; d) combining the nanoporous aerogel and the blending material to form an amalgamation layer; and e) treating the amalgamation layer to increase the mechanical strength of the layer by a substantial amount and to ultimately form a low dielectric material that can be utilized in various applications.

Low dielectric materials and methods of producing same

A low dielectric constant material has a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbones are crosslinked via the first and second reactive groups in a crosslinking reaction without an additional crosslinker, and wherein a cage structure having at least 10 atoms is covalently bound to at least one of the first and second backbone.

Growing community of inventors

San Jose, CA, United States of America

Roger Leung