Other

On International, Inc.

Roger L Felix

Gary M Renlund

Robert H Burgener, Ii

Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and n-type dopants that are controllable and independent of a dopant diffusion profile. The p-n junction is disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant. The p-n junction is fabricated using a crystal growth process that allows dynamic control and variation of both p-type and n-type dopant concentrations during the crystal growth process.

Dynamic p-n junction growth

Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 10atoms/cm. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 10atoms/cm, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450&#xb0; C.; for antimony, the temperature is at least about 650&#xb0; C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 10to about 10atoms/cm.

Low dielectric constant group II-VI insulator

A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.

Persistent p-type group II-IV semiconductors

A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm&#xb7;cm, and the carrier mobility is greater than about 0.1 cm/V&#xb7;s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof. Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, chalcogenides of the foregoing, and mixtures thereof.

P-type group II-VI semiconductor compounds

Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 10atoms&#xb7;cm, the semiconductor resistivity is less than about 0.5 ohm&#xb7;cm, and the carrier mobility is greater than about 0.1 cm/V&#xb7;s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.

Group II-VI semiconductor devices

Up-conversion and down-conversion photo-luminescence in rare earth compounds are disclosed. Broadband, super-radiant, and discrete line emissions are observed. The rare earth compounds include a rare earth element and at least one other element selected from chalcogens, halogens, nitrogen, and phosphorus. The rare earth compounds include, but are not limited to, rare earth oxides, fluorides, and oxyfluorides. Doping and co-doping of rare earth compounds in an optical host material is not required. The compounds are irradiated with incident light having an incident wavelength that is selected to be highly absorbed by the rare earth compound. The up-conversion and down-conversion luminescence have been observed which may be caused by unknown electron transitions, particularly in the case of ytterbia.

Rare earth compounds having photo-luminescent properties and applications thereof

A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.

Zinc oxide crystal growth substrate

A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm&#xb7;cm, and the carrier mobility is greater than about 0.1 cm/V&#xb7;s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof. Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, bismuth, copper, chalcogenides of the foregoing, and mixtures thereof.

Commercially viable methods of manufacturing p-type group II&#x2013;VI semiconductor materials are disclosed. A thin film of group II&#x2013;VI semiconductor atoms is deposited on a self supporting substrate surface. The semiconductor material includes atoms of group II elements, group VI elements, and one or more p-type dopants. The semiconductor material may be deposited on the substrate surface under deposition conditions in which the group II atoms, group VI atoms, and p-type dopant atoms are in a gaseous phase prior to combining as the thin film. Alternatively, a liquid deposition process may be used to deposit the group II atoms, group VI atoms, and p-type dopant atoms in a predetermined orientation to result in the fabrication of the group II&#x2013;VI semiconductor material. The resulting semiconductor thin film is a persistent p-type semiconductor, and the p-type dopant concentration is greater than about 10atoms&#xb7;cm. The semiconductor resistivity is less than about 0.5 ohm&#xb7;cm.

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Pleasant Grove, UT, United States of America

Roger L Felix