Luxtera, Inc.

Molex Corporation

Roger Koumans

Lawrence Cary Gunn, Iii

Thierry J Pinguet

Mark D Peterson

Steffen Gloeckner

Guo Li

Bing Li

Michael Mack

Adithyaram Narasimha

Peter De Dobbelaere

Thiruvikraman Sadagopan

Daniel Kucharski

Behnam Analui

Peter DeDobbelaere

Mark Harrison

Russell K Stiles

Drew Guckenberger

Guo Liang Li

Lawrence C Iii Gunn

Methods and systems for a light source arrangement supporting direct coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The arrangement may include a laser, a microlens, a turning mirror, reciprocal and/or non-reciprocal polarization rotators, and an optical bench. The laser may generate an optical signal that may be focused utilizing the microlens. The optical signal may be reflected at an angle defined by the turning mirror, and may be transmitted out of the light source arrangement to one or more grating couplers in the chip. The laser may include a feedback insensitive laser. The light source arrangement may include two electro-thermal interfaces between the optical bench, the laser, and a lid affixed to the optical bench. The turning mirror may be integrated in a lid affixed to the optical bench or may be integrated in the optical bench.

Light source assembly supporting direct coupling to an integrated circuit

An optical system includes a base, a plurality of optical fibers, and a plurality of optical components. The base has a fiber retention and alignment section and an optical coupling section. The fiber retention and alignment section have a plurality of alignment members, where each alignment member is configured to receive an optical fiber therein. The optical coupling section has an optical coupling block and includes a plurality of optical coupling elements, with each optical coupling element having an ellipsoidal reflecting surface defining a first focal point and a second focal point. The first focal surface is generally aligned with the first focal point. The second focal surface is generally aligned with the second focal point. Each optical fiber is positioned within one of the alignment members and adjacent one of the first focal surfaces. Each optical component is positioned adjacent one of the second focal surfaces.

Optical coupling assembly

Methods and systems for a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The CMOS chip may comprise a plurality of lasers, a microlens, a turning mirror, and an optical bench, and may generate optical signals utilizing the lasers, focus the optical signals utilizing the microlens, and reflect the optical signals at an angle defined by the turning mirror. The reflected optical signals may be transmitted into the photonically enabled CMOS chip, which may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The CMOS chip may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signals to transmit through a lid operably coupled to the optical bench.

Methods and systems for a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The CMOS chip may comprise a laser, a microlens, a turning mirror, and an optical bench, and may generate an optical signal utilizing the laser, focus the optical signal utilizing the microlens, and reflect the optical signal at an angle defined by the turning mirror. The reflected optical signal may be transmitted into the photonically enabled CMOS chip, which may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The CMOS chip may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signal to transmit through a lid operably coupled to the optical bench.

Method and system for a light source assembly supporting direct coupling to an integrated circuit

Methods and systems for a light source assembly for coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The light source assembly may comprise a laser, a microlens, a turning mirror, and an optical bench, and may generate an optical signal utilizing the laser, focus the optical signal utilizing the microlens, and reflect the optical signal at an angle defined by the turning mirror. The reflected optical signal may be transmitted out of the assembly to grating couplers in the photonically enabled CMOS chip. The assembly may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The assembly may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signal to transmit through a lid operably coupled to the optical bench.

Methods and systems for a light source assembly supporting direct coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The assembly may include a laser, a microlens, a turning mirror, reciprocal and/or non-reciprocal polarization rotators, and an optical bench. The laser may generate an optical signal that may be focused utilizing the microlens. The optical signal may be reflected at an angle defined by the turning mirror, and may be transmitted out of the light source assembly to one or more grating couplers in the chip. The laser may include a feedback insensitive laser. The light source assembly may include two electro-thermal interfaces between the optical bench, the laser, and a lid affixed to the optical bench. The turning mirror may be integrated in a lid affixed to the optical bench or may be integrated in the optical bench.

Various embodiments described herein comprises an optoelectronic device comprising a waveguide structure including a plurality of optical modulator elements each having an optical property that is adjustable upon application of an electrical signal so as to modulate light guided in the waveguide structure. The optoelectronic device also comprises a plurality of amplifiers in distributed fashion. Each amplifier is electrically coupled to one of the optical modulators to apply electrical signals to the optical modulator.

Distributed amplifier optical modulator

Embodiments of the inventions described herein comprise a device and method for manipulating an optical beam. The method comprises propagating an optical beam through a waveguide in proximity to a resonant cavity and pumping the resonant cavity with sufficient optical power to induce non-linearities in the refractive index of the resonant cavity. The method further comprises tuning the resonant frequency band of the resonant cavity with a modulation signal such that the optical beam is manipulated in a useful way.

Enhancing the sensitivity of resonant optical modulating and switching devices

High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

Distributed amplifier optical modulators

High speed optical modulators can be made of a lateral PN diode formed in a silicon optical rib waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

Doping profiles in PN diode optical modulators

High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.

PN diode optical modulators fabricated in strip loaded waveguides

High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

PN diode optical modulators fabricated in rib waveguides

High speed optical modulators can be made of a lateral PN diode formed in a silicon optical waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

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Irvine, CA, United States of America

Roger Koumans