Koninklijke Philips Corporation N.v.

Trumpf Photonic Components Gmbh

Philips Intellectual Property & Standards Gmbh

Roger King

Philipp Henning Gerlach

Marcel Franz Christian Schemmann

Marcel F C Schemmann

Philipp H Gerlach

The disclosure relates to a Vertical Cavity Surface Emitting Laser () comprising a first electrical contact (), a substrate (), a first Distributed Bragg Reflector (), an active layer (), a second Distributed Bragg Reflector () and a second electrical contact (). The Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers () arranged below or above the active layer (), wherein each of the current aperture layers () comprises one AlGaAs-layer, wherein a first current aperture layer () of the at least two current aperture layers () is arranged nearer to the active layer () as a second current aperture layer () of the at least two current aperture layers (), wherein the first current aperture layer () comprises a first current aperture () with a bigger size as a second current aperture () of the second current aperture layer (). The disclosure also relates to a method of manufacturing such a VCSEL ().

Vertical cavity surface emitting laser

The invention relates to a Vertical Cavity Surface Emitting Laser () comprising a first electrical contact (), a substrate (), a first Distributed Bragg Reflector (), an active layer (), a second Distributed Bragg Reflector () and a second electrical contact (). The Vertical Cavity Surface Emitting Laser comprises at least one AlGaAs-layer with 0.95&#x2264;y&#x2264;1 with a thickness of at least 40 nm, wherein the AlGaAs-layer is separated by means of at least one oxidation control layer (). The invention further relates to a laser device () comprising such a VCSEL () preferably an array of such a VCSELs () which are driven by an electrical driving circuit (). The invention also relates to a method of manufacturing such a VCSEL ().

The present invention relates to a vertical cavity surface emitting laser device comprising a VCSEL with a monolithically integrated photodiode. The photodiode () is formed of a layer sequence of a first n-doped region (), a p-doped region (), an intrinsic region () and a second n-doped region () of a semiconductor material. The photodiode () and the laser share a common electrode, which is realized as an Ohmic n-contact () at said first n-doped region (). The proposed device allows less complex manufacturing, resulting in lower manufacturing costs.

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Eindhoven, Netherlands

Roger King