Kabushiki Kaisha Toshiba

Roger Highmore

Koichiro Inomata

Keiichiro Yusu

Yoshiaki Saito

Shiho Okuno

Yoshinori Takahashi

A magnetoresistance effect element comprises a magnetic body obtained by dispersing magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni in a semiconductor matrix.

Magnetoresistance effect element

A magnetic device, comprises a first magnetic layer; a second magnetic layer on the magnetic layer and having a coercive force smaller than that of the first magnetic layer; a semiconductor layer between the first and second magnetic layers so that photo-induced magnetism occurs between the first and second magnetic layers when the semiconductor layer is irradiated with light, a third magnetic layer on the second magnetic layer, the third magnetic layer having a coercive force larger than the coercive force of the second magnetic layer, and a second semiconductor layer between the second and third magnetic layers, magnetism being induced between the second and third magnetic layers when the second semiconductor layer is irradiated with light.

Growing community of inventors

Tokyo, Japan

Roger Highmore