Shipley Company LLC

Polaroid Corporation

Polaroid-corporation-patent Department

International Business Machines Corporation

Massachusetts Institute of Technology

Rohm & Haas Electronic Materials LLC

Aspen Aerogels, Inc.

Polaroid Corporation, Patent Dept.

Shiply Company Inc.

Shipley Company, L.l.c. of Marlborough

Roger F Sinta

James W Thackeray

Timothy G Adams

James F Cameron

Mark D Denison

Sheri L Ablaza

Daniel Y Pai

George W Orsula

Martha M Rajaratnam

Russell A Gaudiana

Howard G Rogers

Edward K Pavelchek

James Michael Mori

Thomas M Zydowsky

Manuel doCanto

Gary S Calabrese

Peter Trefonas, Iii

George G Barclay

Richard A Minns

Rosemary Bell

Stephen S Rodriguez

Uday Kumar

Richard C Hemond

Robert F Blacksmith

Robin L Miller-Fahey

David R Medeiros

Dianne Canistro

Wu-Song S Huang

Hiroshi Ito

Mahmoud M Khojasteh

George Leighton Gould

Ashish A Pandya

Charles R Szmanda

Nicholas Anthony Zafiropoulos

Leonard Edward Bogan, Jr

Ahmad D Katnani

Wendell Eugene Rhine

Wenting Dong

William R Brunsvold

Roderick Russell Kunz

Theodore H Fedynyshyn

Ronald Wayne Nunes

Jacque H Georger, Jr

Redouane Begag

Michael Sworin

Angelo Anthony Lamola

Shannon Olga White

Roxana Trifu

Alaric Naiman

Kevin J Cheetham

Michael F Cronin

Juan C Scaiano

Paul Nahass

Manual doCanto

James I Fahey

Materials and methods for manufacturing electronic devices and semiconductor components using low dielectric materials comprising polyimide based aerogels are described. Additional methods for manipulating the properties of the dielectric materials and affecting the overall dielectric property of the system are also provided.

Electronic device manufacture using low-k dielectric materials

The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Dyed photoresists and methods and articles of manufacture comprising same

Photoresist compositions having a resin binder with an acid labile blocking group with an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base.

Photoresist composition

Photoresist compositions

The invention provides photoresist compositions comprising a resin binder having acid labile blocking groups requiring an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base additive. It has been found that linewidth variation is substantially reduced when using the halogenated sulfonic acid generator in a process involving a high temperature post exposure bake.

The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.

Low abosorbing resists for 157 nm lithography

The present invention relates to new copolymers and use of such copolymer as a resin binder component for photoresist compositions, particularly chemically-amplified positive-acting resists. Polymers of the invention include repeat units of 1) meta-hydroxystyrene groups, 2) para-hydroxystyrene groups, and 3) photoacid-labile groups.

Hydroxyphenyl copolymers and photoresists comprising same

The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a low molecular weight anthracene dye compounds. It has been found that these dye compounds can significantly reduce or even eliminate undesired reflections of exposure radiation, particularly deep U.V. exposure radiation such as 248 nm, as well as function as effective sensitizer compounds, enabling effective imaging at higher wavelengths, particularly I-line exposures.

The invention provides photoresist compositions comprising a resin binder having acid labile blocking groups requiring an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base additive. It has found that linewidth variation is substantially reduced when using the halogenated sulfonic aced generator in a process involving a high temperature post exposure bake.

The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Antireflective coating compositions and exposure methods under 200 nm

Methods utilizing antireflective coating compositions with exposure under 200 nm

The invention provides inter alia new methods to produce aqueous developable resin binders for negative-acting photoresists. The methods in general comprise free radical polymerization of one or more types of monomers in the presence of a free radical polymerization control agent, particularly a nitroxide polymerization control agent such as a piperidinyloxy (N-oxy) free radical, and wherein at least one of the monomer types contains a moiety that enables aqueous solution development of a photoresist composition containing the formed polymer.

Narrow molecular weight distribution polymers and use of same as resin

The present invention provides novel polymers and chemically-amplified positive-acting photoresist compositions that contain such polymers as a resin binder component. The polymers of the invention include acid labile groups that contain isobornyl moieties and groups that contribute to aqueous development of a photoresist such as phenolic groups.

Polymers and photoresist compositions

The invention includes use of a positive chemically amplified photoresist composition that produces a strong photogenerated acid. The resist is coated onto a metal substrate that has been subjected to a stringent bake step, e.g. heating of the substrate at about at least 140.degree. C. for more than 60 seconds. The combined use of strong photogenerated acid and stringent pre-coating substrate bake provides highly resolved resist relief images, including on metal substrates.

Photoresist compositions and methods and articles of manufacture

Growing community of inventors

Woburn, MA, United States of America

Roger F Sinta