Bell Telephone Laboratories

Roger Edwards

Bernard T Murphy

William Joshua Evans

Wesley Norman Grant

A method of making an oxide isolated integrated circuit structure is simplified by forming a first level metallization pattern without the conventional underlying insulating layer and without the need for restricting the size of the metallization to the size of the semiconductor regions to be contacted. Portions of the first level metallization pattern can extend on the oxide isolation region to contact two otherwise isolated semiconductor zones. Additionally, subsequent to the formation of the oxide isolation regions and the first level metallization, an intermediate dielectric masking pattern is formed so the combination of the first level metallization, the oxide isolation regions and the masking pattern defines zones for the introduction of impurities. Further, the masking pattern alone is used to provide contact holes for a subsequently formed second level metallization pattern.

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Gillette, NJ, United States of America

Roger Edwards