US Government As Represented by the Secretary of the Army

Roger D Kaul

Louis J Jasper, Jr

Ronald G Polcawich

Jeffrey Spencer Pulskamp

Douglas A Kirkpatrick

Sarah Salah Bedair

Robert V Garver

Stephen E Saddow

Chance M Glenn, Sr

George Bergeron

Kisha N Gwyn

David Sumner

Chance Glenn

A binary bi-phase shift modulator having an input piezoelectric transducer and an output piezoelectric transducer connected in series between a radio frequency input and a radio frequency output. A fixed DC pole voltage having a first polarity is connected to one of the transducers. A DC switched pole voltage is connected to the other transducer which switches between the pole voltage of the first polarity and a pole voltage of the opposite polarity in accordance with a binary data signal. The polarity of the radio frequency input relative to the radio frequency output varies as a function of the polarity of the DC switched pole voltage.

Binary bi-phase shift modulator

An apparatus using field emission techniques to limit voltage on RF transmission lines. A voltage limiter comprises a cathode and an anode housed in an airtight tube, whereby the cathode comprises a field emitter array having a plurality of field tips distributed about the surface of an insulating layer, and a microstrip transmission line overlying the insulating layer and having a predetermined width to form electrical contact with a selected group of the field tips. The microstrip transmission line enables propagation of electromagnetic microwave energy over a bandwidth of multiple octaves. The field emitters enable the generation of a flow of electrons at a predetermined breakdown threshold voltage, without the necessity for an external source to induce electron flow. Generation of the electron flow by the field tips creates a reflection wave on the transmission line that interferes with the incident electromagnetic energy to limit the voltage on the transmission line.

Microwave field emitter array limiter

A passive RF limiting circuit device providing protection for receiver front ends and the like by utilizing PIN diodes acting as switching devices which transform a low-loss T-network attenuator circuit into a high-loss .pi.-network attenuator circuit under high power conditions.

Non-reflective limiter

A monolithic microwave integrated circuit is enclosed within an ionizable gas filled housing having a terminal protection device integral with the circuit's substrate. A photon generating region extends within the substrate and along a portion of the surface area of the substrate for facilitating the ionizing of the gas. First and second electrodes, in contact with the substrate surface area and disposed on opposite sides of the photon generating region, have a plurality of cantilevered protrusions extending over the surface of the substrate and equally spaced from one another forming spark-gaps therebetween. One electrode is connected to an input to the device while the other is connected to ground. When a potential difference between the first and second electrodes increases towards a predetermined value, due to high RF input energy, the photon generating region is operatively biased to emit photons, which ionize the gas, resulting in a voltage discharge across the spark-gaps to occur quickly and at a lower voltage than the semiconductor breakdown voltage.

Monolithic microwave integrated circuit terminal protection device

Growing community of inventors

Skyesville, MD, United States of America

Roger D Kaul