Specialty Coating Systems, Inc.

Other

Alpha Metals, Inc.

Union Carbide Chemicals & Plastics Technology Corporation

Specialty Coating Sysetms, Inc.

Roger A Olson

William F Beach

John Wary

Joseph Patrick O'Connor

Frederick William Kopitzke, Iii

Bruce J Humphrey

Alan D Olson

Kermit Crain

Walter Swanson

A tree spade () that is mounted on an all terrain vehicle () is disclosed. The tree spade () includes a support frame () that is able to pivot relative to the all terrain vehicle () between a transport position and an operational position. A blade frame () is mounted on and movable relative to the support frame (). At least two blade assemblies () are mounted to the blade frame () for digging holes, lifting a tree and a corresponding dirt core, and supporting the same during transport. A pulley system () is interconnected with each of the all terrain vehicle (), the support frame (), and the blade frame () such that operation of a single actuator () moves the blade frame () along a column () of the support frame () and also pivots the support frame () relative to the all terrain vehicle ().

Tree spade for ATV

A method and apparatus for more efficiently depositing a gas onto a surface. In one embodiment, a deposition apparatus is provided. The deposition apparatus comprises a deposition chamber, a tube and a heating element. The tube is in fluid communication with the deposition chamber, and the heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube. In another embodiment, a method of depositing a product gas onto a surface is provided. The method comprises placing a first gas into a tube; heating first and second portions of the first gas to first and second temperatures, respectively, to form the product gas, the first portion of the first gas being adjacent the centerline of the tube, the second portion of the first gas being adjacent the inner surface of the tube, the first temperature being greater than the second temperature; and depositing the product gas onto the surface.

Internally heated pyrolysis zone

Continuous vapor deposition apparatus for coating objects with a coating material, e.g., parylene, are disclosed. The apparatus comprise an entrance chamber for loading the objects, a process chamber for coating the objects, and an exit chamber for removing the objects. Coating material is introduced into the process chamber under vacuum conditions in a vaporized state. The pressure in the process chamber can be controlled by modulating the rate of introduction of the coating material with a modulating valve in response to the pressure in the process chamber. A process for continuously coating objects by vapor deposition under vacuum conditions, suitable for use in the apparatus, is also disclosed.

Continuous vapor deposition apparatus

Multi-level structures including a first layer with a parylene polymer layer deposited thereon. The parylene polymer layer has the structure: ##STR1## m is an integer having a value of 0, 1, 2, 3 or 4, and z is greater than 1. G is a halogen, an alkyl group, a cyclo hydrocarbon, an alkylene group or an alkylyne group having the general formula C.sub.n H.sub.y X.sub.w. X is a halogen, and n is an integer greater than zero. The sum of y and w is at most equal to a 2n+1. The parylene polymer layer can have a zinc impurity level of about 66 parts per billion or less. The parylene polymer layers are formed by a process in which monomers are formed outside of a deposition zone of a vacuum chamber. The monomers may be prepared by a process in which a parylene dimer is vaporized and subsequently pyrolized. The process may further include the step of passing the vapor through a post-pyrolysis zone prior to depositing the monomer on the substrate.

Parylene polymer layers

A method and apparatus for depositing parylene monomer within the interior of a deposition chamber of a parylene deposition system. In certain embodiments, the method comprises the steps of: (a) introducing a cryogenic fluid into the interior of the deposition chamber to cool the surface of the substrate; and (b) introducing the parylene monomer into the interior of the chamber to deposit the parylene monomer onto the surface of the substrate. In some embodiments, the apparatus comprises: a deposition chamber; a pumping system, a source of cryogenic fluid, a gas source and at least one support mount disposed within the interior of the deposition chamber. The pumping system reduces the pressure of the interior of the deposition chamber, and the pumping system is in fluid communication with the interior of the deposition chamber. The source of cryogenic fluid is in fluid communication with the interior of the deposition chamber. The gas source is in fluid communication with the interior of the deposition chamber. Optionally, the method or apparatus may include the use of a load lock chamber.

Method and apparatus for cryogenically cooling a deposition chamber

Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a heated and cooled dimer receptacle for fast and efficient vaporization of parylene dimer material.

Parylene deposition apparatus including a heated and cooled dimer

Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes an oilless, dry vacuum pump connected rierctly to the deposition chamber, and a liquid nitrogen cooled cold trap connected to the outlet of the vacuum pump. The apparatus further includes a vacuum by-pass assembly wherein a high-conductance vacuum outlet is utilized to quickly reduce pressure in the chamber system and a low-conductance vacuum manifold outlet is utilized to maintain vacuum flow during the deposition procedure.

Parylene deposition apparatus including dry vacuum pump system and

Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. A method of depositing parylene AF4 onto the surface of a semiconductor wafer includes cooling the semiconductor chip wafer to a temperature below 0.degree. C., creating an inert atmosphere around the apparatus, creating sub-atmospheric pressure conditions around the wafer while maintaining the inert external atmosphere, and depositing a predetermined thickness of the parylene AF4 polymer onto the wafer. The method further includes the steps of heating the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions, and may still further include the steps of further heating the wafer to a predetermined annealing temperature, and the cooling the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions.

Method and apparatus for the deposition of parylene AF4 onto

Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a heated and cooled platen for supporting the wafer in the deposition chamber and for controlling the temperature of the wafer during deposition procedures, and further includes an electrostatic clamping device for clamping the wafer in intimate thermal contact with the platen.

Parylene deposition apparatus including a heated and cooled support

A parylene deposition apparatus includes a quartz crystal thickness/rate controller for controlling the deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The crystal is located within the deposition chamber to receive a coating of parylene consistent with that of the substrate being coated. The vaporization chamber of the apparatus includes a heat transfer receptacle for receiving parylene dimer to be vaporized. The heat transfer receptacle includes heating and cooling devices to control the temperature thereof. In operation, parylene monomer deposits onto the surface of the crystal during deposition thereby varying the vibration frequency of the crystal. The rate of change in frequency can be directly correlated with the rate of monomer deposition. The crystal is associated with a microcontroller and set-point comparator, and further with the heating and cooling elements of the vaporization chamber to effectively monitor the thickness of the parylene coating during deposition, and control the rate of vaporization of the dimer.

Parylene deposition apparatus including a quartz crystal thickness/rate

Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes an atmospheric shroud which envelopes the entire apparatus, and further includes an inert gas source for providing an inert atmosphere within the shroud. The purpose of the shroud and inert atmosphere is to exclude oxygen from the deposition chamber during vacuum evacuation and the subsequent coating cycle, thus allowing the coating process to be carried out in a substantially oxygen free environment.

Parylene deposition apparatus including an atmospheric shroud and inert

A parylene deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a frusto-conical shaped deposition chamber which minimizes deposition chamber volume and maximizes flow of vapor over the surface of the wafer, and a vacuum by-pass assembly wherein a high-conductance vacuum outlet is utilized to quickly reduce pressure in the vacuum chamber system and a low-conductance vacuum manifold outlet is utilized to maintain vacuum flow during the deposition procedure.

Parylene deposition apparatus including a tapered deposition chamber and

Apparatus are disclosed for coating the inside surfaces of hollow objects with a coating material by vapor deposition wherein the objects are removably attached to a rotary fixture which is employed for holding the objects while the coating process is being conducted. The rotary fixture comprises a hollow chamber rotatably mounted about an axis of rotation wherein the chamber can have a plurality of connecting union assemblies which secure the objects and provide communication between the inside surfaces of the objects and the inside space of the hollow chamber. The coating material is introduced from the interior space of the hollow chamber to the interior space of the objects under vacuum conditions.

Rotary fixture for vapor deposition coating apparatus

An apparatus is disclosed for coating articles with a coating material by vapor deposition wherein a cellular fixture is employed for tumble coating the articles. The cellular fixture comprises multiple cells disposed radially about a common axis of rotation. The cells comprise hollow members having side walls with a plurality of openings therethrough to permit the flow of vapors of coating material, e.g. parylene, through the openings into the cells.

Growing community of inventors

Amery, WI, United States of America

Roger A Olson