Applied Materials, Inc.

Novellus Systems Incorporated

Roey Shaviv

Ismail T Emesh

Alexander N Lerner

Satish Radhakrishnan

Prashanth Kothnur

Xikun Wang

Hui-Jung Wu

Jeffrey Allen Brodine

Kevin Vincent Moraes

Kim Ramkumar Vellore

Andrew J Constant

Michael P Karazim

Mandyam Sriram

Suketu Arun Parikh

Joung Joo Lee

Jianxin Lei

Thomas W Mountsier

Yongsik Yu

Serdar Aksu

Kaushik Chattopadhyay

John W Lam

Nitin K Ingle

Joseph Michael Ranish

Anshu A Pradhan

Bart Jan Van Schravendijk

Mehul B Naik

Seshadri Ganguli

Gregory J Wilson

Paul R McHugh

Jianshe Tang

Steven Victor Sansoni

Sanjay Gopinath

Feng Chen

Daniel R Juliano

Rong Tao

David Maxwell Gage

Shirish A Pethe

Mahesh K Sanganeria

Alexander Dulkin

Michael Anthony Stolfi

Phillip Stout

Glenn B Alers

Xiaozhou Che

Peter John Holverson

Niranjan Kumar

Chris Pabelico

Dimitrios Argyris

Steven T Mayer

Robert T Rozbicki

Xianmin Tang

David Wingto Cheung

Raashina Humayun

Pramod Subramonium

Jengyi Yu

Juwen Gao

Nagraj Shankar

Bencherki Mebarki

Ronald Allan Powell

Daniel Lee Diehl

Jung Gu Lee

Lu Chen

Deqi Wang

Neil Mackie

Tsung-Han Yang

Ben-Li Sheu

Joon Hong Park

Wenting Hou

Kirk J Ostrowski

Amikam Sade

Bayu Thedjoisworo

Ami Sade

Gengwei Jiang

Ronald L Kinder

Sergei Klimovich

Bart Sakry

Timothy Bochman

Patrick J Lord

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Methods for forming films on substrates

Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and the second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

Apparatus and method for controlling a flow process material to a deposition chamber

Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.

Low resistance and high reliability metallization module

Methods of introducing precursors through a segmented showerhead are provided herein. In some embodiments, a method of introducing precursors through a segmented showerhead having a plurality of gas delivery portions that are fluidly isolated includes heating a first gas delivery portion to a first temperature; and simultaneously heating a second gas delivery portion to a second temperature different than the first temperature, wherein each of the first and second gas delivery portions (i) have a wedge shaped body that defines a plenum, (ii) are coplanar, and (iii) together form a showerhead having a circular shape.

Methods of using a segmented showerhead for uniform delivery of multiple pre-cursors

Embodiments of a showerhead are described herein. In some embodiments, a showerhead assembly includes: a first gas delivery portion having a first body, a first inlet, and a plurality of first tubes extending from the first body and defining a first plenum, wherein each tube of the plurality of first tubes includes a plurality of first holes; and a second gas delivery portion having a second body, a second inlet, and a plurality of second tubes extending from the second body and defining a second plenum fluidly independent from the first plenum, wherein each tube of the plurality of second tubes includes a plurality of second holes, and wherein the plurality of first tubes are disposed in an alternating pattern with the plurality of second tubes across a width of the showerhead assembly and a heat sink disposed between the plurality of first tubes and the plurality of second tubes.

Showerhead for providing multiple materials to a process chamber

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Methods and apparatus for forming dual metal interconnects

Apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

Segmented showerhead for uniform delivery of multiple precursors

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.

Evaporator chamber for forming films on substrates

An alignment module for housing and cleaning masks. The alignment module comprises a mask stocker, a cleaning chamber, an alignment chamber, an alignment stage a transfer robot. The mask stocker is configured to house a mask cassette configured to store a plurality of masks. The cleaning chamber is configured to clean the plurality of masks by providing one or more cleaning gases into a chamber after a mask is inserted into the cleaning chamber. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer a mask from one or more of the alignment stage and the mask stocker to the cleaning chamber.

Alignment module with a cleaning chamber

An alignment module for positioning a mask on a substrate comprises a mask stocker, an alignment stage, and a transfer robot. The mask stocker houses a mask cassette that stores a plurality of masks. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer one of the one or more masks from the mask stocker to the alignment stage and position the mask over the substrate. The alignment module may be part of an integrated platform having one or more transfer chambers, a factory interface having a substrate carrier chamber and one or more processing chambers. A carrier may be coupled to a substrate within the substrate carrier chamber and moved between the processing chambers to generate a semiconductor device.

System and method for aligning a mask with a substrate

Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

Processing system for forming layers

Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and a second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain 'additive packages' or 'additive systems' that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.

Enhanced plating bath and additive chemistries for cobalt plating

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1&#xd7; feature and at least one wider than 1&#xd7; feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1&#xd7; feature and at least one wider than 1&#xd7; feature; the first metal material is reflowed such that the at least one 1&#xd7; feature is filled with the first metal material and the at least one wider than 1&#xd7; feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1&#xd7; feature is filled with the second metal material.

Growing community of inventors

Palo Alto, CA, United States of America

Roey Shaviv