Degussa Aktiengesellschaft

Evonik Degussa Gmbh

Roelant Van Dam

Hartwig Rauleder

Adolf Kuehnle

Klaas Timmer

Hartmut Rudolf Fischer

Carsten Jost

Adolf Kühnle

Corne Rentrop

Come Rentrop

Hartmut Fischer

The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RXSiO)(RYSiO)] with: a, b=0-1; c, d=1; m+n&#x2267;3; a+b=1; n, m&#x2267;1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O&#x2014;SiZZZ, where Z, Zand Zare fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

Process for producing low-k dielectric films

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Maastricht, Netherlands

Roelant Van Dam