Seagate Technology Incorporated

Rodney Virgil Bowman

Antoine Khoueir

Youngpil Kim

Wei Tian

Dadi Setiadi

Navneeth Kankani

Tong Shirh Stone

Mark A Gaertner

Ryan James Goss

Young Pil Kim

David Scott Seekins

Mai Ghaly

Laszlo Hars

Monty Aaron Forehand

Donald Preston Matthews, Jr

Don R Bloyer

Young-Pil Kim

Varun Voddi

Caitlin Marie Race

Methods and systems that include receiving data to be written to a NAND array in a controller; and writing the data to the NAND array, the NAND array including both type A NAND cells and type B NAND cells, wherein the type A NAND cells and the type B NAND cells have at least one structural difference.

Methods and systems including at least two types of non-volatile cells

Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, data are written to a set of solid-state non-volatile memory cells so that each memory cell in the set is written to an associated initial programmed state. Drift in the programmed state of a selected memory cell in the set is detected, and the selected memory cell is partially reprogrammed to return the selected memory cell to the associated initial programmed state.

Partial reprogramming of solid-state non-volatile memory cells

A memory controller identifies a predominant type of error of a memory unit of solid state memory cells. An error type differential is calculated. The error type differential is a difference between a number of charge loss errors and a number of charge gain errors of the memory unit. A Voffset error differential is calculated. The Voffset error differential is a difference between a number of errors of the predominant type at a first Voffset and a number of errors of the predominant type at a second Voffset. A Voffset is determined using a ratio of the error type differential and the Voffset error differential.

Threshold voltage calibration using reference pattern detection

Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with various embodiments, a first data access operation is conducted on a memory cell and a first temperature associated with the memory cell and associated with the first data access operation is measured. A second temperature associated with the memory cell is measured. At least one operational parameter is adjusted responsive to the first and second temperatures associated with the memory cell. A second data access operation is conducted on the memory cell using the adjusted operational parameter.

Temperature tracking to manage threshold voltages in a memory

Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In some embodiments, an apparatus includes an array of memory cells and a dual polarity charge pump. The dual polarity charge pump has a positive polarity voltage source which applies a positive voltage to a charge storage device to program a selected memory cell to a first programming state, and a negative polarity voltage source which applies a negative voltage to the charge storage device to program the selected memory cell to a different, second programming state.

Programming a memory cell using a dual polarity charge pump

Memory arrays that include a first memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate; and a second memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate, wherein the first memory cell and the second memory cell are positioned parallel to each other.

Three dimensional floating gate NAND memory

A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy information that is useful to aid in reading and/or decoding the first data set. The act of writing the second data set increases the data reliability of the first data set. The second data set may be a null pattern, such as all erased bits.

Methods and devices to increase memory device data reliability

Threshold voltage offsets for threshold voltages are determined. The threshold voltage offsets may be linearly related by a non-zero slope. The threshold voltages are shifted using their respective threshold voltage offsets. The threshold voltages that are shifted by their respective threshold voltage offsets are used to read data from multi-level memory cells.

Linearly related threshold voltage offsets

A memory device includes a stack of layers comprising a plurality of alternating layers of continuous electrically conductive material word line layers with layers of continuous electrically insulating material. A plurality of vias vertically extend through the stack of layers and a vertical bit line is disposed within each via. A layer of switching material separates the vertical bit line from the stack of layers, thereby forming an array of RRAM cells.

Three dimensional resistive memory

A fault tolerant control line configuration useful in a variety of solid state memories such as but not limited to a flash memory. In accordance with some embodiments, an apparatus includes a plurality of memory cells, and a fault tolerant control line. The control line has an elongated first conductive path connected to each of the plurality of memory cells. An elongated second conductive path is disposed in a parallel, spaced apart relation to the first conductive path. A plurality of conductive support members are interposed between the first and second conductive paths to support the second conductive path above the first conductive path.

Fault tolerant control line configuration

Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, a memory cell is provided with a plurality of available programming states to accommodate multi-level cell (MLC) programming. A control circuit stores a single bit logical value to the memory cell using single level cell (SLC) programming to provide a first read margin between first and second available programming states. The control circuit subsequently stores a single bit logical value to the memory cell using virtual multi-level cell (VMLC) programming to provide a larger, second read margin between the first available programming state and a third available programming state.

Using different programming modes to store data to a memory cell

The disclosure is related systems and methods for using operation durations of a data storage medium to generate random numbers. In one embodiment, a device may comprise a random number generator circuit configured to store a value representing a duration of an operation on the data storage medium, and generate a random number based on the value. Another embodiment may be a method comprising recording durations of access operations to a data storage medium, and generating a random number based on the durations.

Using memory access times for random number generation

Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a soft erasure is performed on a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block. The memory cells are subsequently overwritten with a set of data using a write polarity direction determined responsive to the toggled erasure status value.

Growing community of inventors

Bloomington, MN, United States of America

Rodney Virgil Bowman