International Business Machines Corporation

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Purdue Research Foundation

Rodney T Hodgson

Jerry M Woodall

Jane M Shaw

Alfred Viehbeck

Jeffrey Curtis Hedrick

Elizabeth F Foster

Stephen L Tisdale

Ali Afzali-ardakani

Shahrokh Daijavad

Steven E Molis

Ashit A Mehta

James L Hedrick, Jr

Bodil E Braren

Juan Ayala-Esquilin

Michael R Melloch

Paul Michael Solomon

Harold John Hovel

Jeremy H Burroughes

Oliver C Wells

Alan C Warren

Peter P Sorokin

David T McInturff

Nobuo Otsuka

Alfred Grill

Paul Andrew Moskowitz

Vishnubhai Vitthalbhai Patel

Gerd K Binnig

Timothy C Reiley

James Sargent Lipscomb

Douglas S Goodman

David D Nolte

Peter Daniel Kirchner

Thomas N Jackson

John Lawrence Freeouf

Gary W Rubloff

Marc David Levenson

Hans S Rupprecht

Peter G Ledermann

Heinrich Rohrer

George D Pettit

Gottlieb S Oehrlein

Thomas O Sedgwick

Daniel R Grischkowsky

Harry J Jones

Michael M Loy

Jackson E Stanland

Robert H Wolfe, Jr

Randall M Feenstra

James Glownia

Victor L Moruzzi

Paul M Marcus

Francoise K LeGoues

A novel practicable type of gaseous optical gain medium for efficiently generating intense, highly monochromatic, continuous-wave (CW) or pulsed, coherent light beams is disclosed. Gain results from nonlinear optical pumping of a gas of &#x39b;-type 'three-level' atoms, coherently phased ('dressed') via application to the medium of two monochromatic laser beams tuned to the resonance frequencies &#x3c9;and &#x3c9;'. Nonlinear optical pumping of the &#x201c;dressed-atom&#x201d; gas is accomplished through the combined action of two separate physical processes: (1) A low pressure gaseous discharge, occurring continuously within the vessel containing the gain medium, produces intense narrow-band fluorescence at &#x3c9;and &#x3c9;&#x2032;through the process of electron impact excitation (EE). (2) Via a specific form of the nonlinear photonic process of stimulated hyper-Raman scattering (SHRS), photons comprised by the narrow-band fluorescence generated in (1) are efficiently converted to photons comprised by the propagating coherent light beams at &#x3c9;and &#x3c9;&#x2032;, thus effecting amplification of the latter.

Discharge-pumped 'dressed-atom' coherent light amplifier and generators

A diffusion barrier attached to the cladding layer prevents significant diffusion of a Raman active gas out of the holes in a holey fiber or photonic band gap fiber.

Diffusion barriers for holey fibers

Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns. The composite can be made conductive by irradiating it with an UV excimer laser.

Fluorinated carbon polymer composites

Disclosed is a process of effecting a change in the dielectric constant and coefficient of thermal expansion of a polyimide material, by forming a composite based on a dispersion of 2-60 wt. % of fluorinated particulate carbon material and a polyimide or polyimide precursor, and heating the dispersion to about 400.degree. C. at 65.degree.-200.degree. C./second.

A display assembly includes a display screen having a predetermined generally planar area for displaying transmissive data. A light source is provided for generating light of predetermined intensity, and a circular Fresnel lens is disposed between the light source and the display means, the circular Fresnel lens imaging the light source through the display means and onto an opposite side of the display means. A diffuser is disposed between the light source and the display means for diffusing the light. The intensity of the light source is selected to be appropriate for direct human viewing of the transmissive data.

Back-lighting system for transmissive display

A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.

LTG AlGaAs non-linear optical material and devices fabricated therefrom

A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.

Method of making a compound semiconductor having metallic inclusions

An apparatus and method for detecting a magnetic field has been described incorporating a material which switches from an antiferromagnetic order to a ferromagnetic order upon the application of a magnetic field and wherein the material is FeRh, FeRu, FePd or MnPt, a heating element for controlling the temperature of the material and a current source for sensing the change of resistance of the material to determine when the material is ferromagnetically ordered. The invention overcomes the problem of small changes in resistance of magnetoresistive sensors operating in only the ferromagnetic order.

Atomic layered materials and temperature control for giant

Compound semiconductor having metallic inclusions and devices fabricated

The invention provides a capacitor having increased capacitance comprising one or more main vertical trenches and one or more lateral trenches extending off the main vertical trench. The capacitor has alternating first and second regions, preferably silicon and non-silicon regions (for example, alternating silicon and germanium or alternating silicon and carbon regions). The etch characteristics of the alternating regions are utilized to selectively etch lateral trenches thereby increasing the surface area and capacitance of the capacitor. A method of fabricating the capacitors is also provided.

High area capacitor formation using material dependent etching

A method and apparatus for producing fine line patterns on insulating surfaces utilizing a conductive spring-like cantilever having a pointed tip which is in proximity to the surface to be affected. Electrons emitted from the tip travel toward the insulator surface and cause changes therein or affect molecules located in the proximity of the insulator surface. Tunneling current is not required, and a highly conducting return current path for electrons through the insulator is not necessary. The incident electrons can be used to provide patterned, narrow-width features either by deposition of a material onto the insulator surface, or by producing etching in localized regions of the insulator surface, or by changing the insulator surface so that it can be etched.

Method and apparatus for writing or etching narrow linewidth patterns on

An electron microscope which includes a detector which is located in the magnetic field used to focus the primary electron beam onto the sample. The focusing magnetic field is used to energy-filter and/or energy analyze the scattered electrons without the need for additional equipment, such as a retarding-field energy filter. The magnetic field of the condenser-objective lens (or of any other type of magnetic lens) of the microscope provides the filtering and/or analyzing action, and the detector can be located so as to collect only low-loss electrons.

Magnetically filtered low loss scanning electron microscopy

Automated bonding of chips to tape and formation of bonding structures on Tape Automated Bonding (TAB) packaging structures are provided with bonding balls on the ends of beams leads of the TAB tape. Also balltape bonding balls are aligned on stacked TAB sheets and bonded together to form via interconnections through stacked balltape balls in multilayer, electronic packaging structures. Interconnection structures are provided for a universal chip connection laminate which can be applied between a chip and an MLC package. Area TAB tape, which comprises a modification of TAB tape provides balltape TAB connections by means of balltape bonds to areas within the interior of a chip whose leads are bonded in a TAB tape arrangement to the Inner Lead Bonds of the area tape.

Balltape structure for tape automated bonding, multilayer packaging,

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Ossining, NY, United States of America

Rodney T Hodgson