The University of Texas System

Texas Instruments Corporation

Rodney S Ruoff

Luigi Colombo

Robert M Wallace

Meryl D Stoller

Xuesong Li

Yufeng Hao

Iskandar Kholmanov

Yanwu Zhu

Li Li Zhang

Shanthi Murali

A method of forming graphene single crystal domains on a carbon substrate is described.

Methods of forming graphene single crystal domains on a low nucleation site density substrate

Doped activated microwave expanded graphite oxide materials and doped monolayer graphene materials, and methods of making these materials. The materials exhibit increased capacitance relative to undoped activated microwave expanded graphite oxide and monolayer graphene. The materials are suitable for use in, for example, ultracapacitors.

Ultracapacitor with a novel doped carbon

A hybrid transparent conductive film, and methods for fabricating such hybrid transparent conductive films, involving the assembly of two-dimensional graphene-based materials with one-dimensional silver and/or copper nanowires with high optical transmittance and good electrical conductivity. The hybrid films are characterized by a good degree of control of the architecture at the nanoscale level, where the weakness(es) of each component are offset by the strengths of the other components. By rational design of the structure and using simple and locate-cost fabrication methods, hybrid films with sheet resistance of 26 ohm/sq and optical transmittance (at &#x3bb;=550 nm) of 83% for reduced graphene oxide/silver nanowire films, and 64 ohm/sq and optical transmittance of 93.6% for monolayer graphene/silver nanowire films have been fabricated. These values are comparable to transparent conductive films based on indium tin oxide but are now able to be used in flexible electronics due to their good mechanical properties.

Graphene/metal nanowire hybrid transparent conductive films

Disclosed is a carbon material that can be useful, for example, in ultracapacitors. Also disclosed are applications and devices containing the carbon material.

Ultracapacitor with a novel carbon

Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400&#xb0; C. and 1,400&#xb0; C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.

Graphene synthesis by chemical vapor deposition

A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.

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Austin, TX, United States of America

Rodney S Ruoff