Fairchild Semiconductor Corporation

Rodney S Ridley, Sr

Hamza Yilmaz

Christopher Boguslaw Kocon

Joseph Andrew Yedinak

James N Pan

Thomas E Grebs

Gary M Dolny

Nathan Lawrence Kraft

Praveen Muraleedharan Shenoy

Mark L Rinehimer

Louise E Skurkey

A power device includes a semiconductor substrate having a plurality of alternately arranged pillars of first and second conductivity types. At least one of the plurality of pillars of second conductivity type includes a first trench epitaxial layer of the second conductivity type disposed on a trench sidewall of the second trench and a trench bottom surface of the second trench, a second trench epitaxial layer of the second conductivity type disposed on the first trench epitaxial layer of the second conductivity type, and an insulating material layer disposed on the second trench epitaxial layer of the second conductivity type.

Superjunction structures for power devices and methods of manufacture

In a power semiconductor device , a continuous trench has an outer circumferential portion that includes a field plate and inner portions that carry include one or more gate runners to that the gate runners and the field plate are integral with each other. The trench structure is simpler to form and takes up less surface space that the separate structures of the prior art. The trench is lined with an insulator and further filled with conductive polysilicon and a top insulator.

Buried gate-field termination structure

Growing community of inventors

Mountain Top, PA, United States of America

Rodney S Ridley, Sr