Cymer, Inc.

Rodney D Simmons

Igor Vladimirovich Fomenkov

Oleh V Khodykin

William N Partlo

Norbert R Bowering

I Roger Oliver

Jerzy R Hoffman

Gerry M Blumenstock

Richard M Ness

Alexander Bykanov

Timothy S Dyer

Curtis L Rettig

Stephan T Melnychuk

R Mark Johnson

Alexander Igorevich Ershov

Georgiy Olegovich Vaschenko

R Kyle Webb

Xiaojiang Jason Pan

Norbert Bowering

David C Brandt

John Viatella

Bjorn A M Hansson

Nortbert Bowering

Alexander N Bykanov

A coupling arrangement for coupling a light source subsystem with a scanner subsystem in a UV lithography system is disclosed. The arrangement includes a source flange having a plurality of ramped eared flanges coupled to one of the light source subsystem and the scanner subsystem. The arrangement also includes a collar coupled with the other of the light source subsystem and the scanner subsystem. The collar has a plurality of tangs disposed such that inter-tang spacings accommodate insertion of the plurality of eared flanges, wherein at least one of the source flange and the collar is rotatable to permit the plurality of ramped eared flanges to cam against the plurality of tangs, thereby coupling the light source subsystems to the scanner subsystem.

Blind motorized coupling arrangements for coupling UV light source subsystem and scanner subsystem in a UV lithography system and methods therefor

Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.

Systems and methods for target material delivery in a laser produced plasma EUV light source

An EUV light source and method of operating same is disclosed which may comprise: an EUV plasma production chamber comprising a chamber wall comprising an exit opening for the passage of produced EUV light focused to a focus point; a first EUV exit sleeve comprising a terminal end comprising an opening facing the exit opening; a first exit sleeve chamber housing the first exit sleeve and having an EUV light exit opening; a gas supply mechanism supplying gas under a pressure higher than the pressure within the plasma production chamber to the first exit sleeve chamber. The first exit sleeve may be tapered toward the terminal end opening, and may, e.g., be conical in shape comprising a narrowed end at the terminal end.

EUV light source

A laser produced plasma ('LPP') extreme ultraviolet ('EUV') light source and method of operating same is disclosed which may comprise an EUV plasma production chamber having a chamber wall; a drive laser entrance window in the chamber wall; a drive laser entrance enclosure intermediate the entrance window and a plasma initiation site within the chamber and comprising an entrance enclosure distal end opening; at least one aperture plate intermediate the distal opening and the entrance window comprising at least one drive laser passage aperture. The at least one aperture plate may comprise at least two aperture plates comprising a first aperture plate and a second aperture plate defining an aperture plate interim space. The at least one drive laser aperture passage may comprise at least two drive laser aperture passages. The laser passage aperture may define an opening large enough to let the drive laser beam pass without attenuation and small enough to substantially reduce debris passing through the laser passage aperture in the direction of the entrance window.

LPP EUV drive laser input system

The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

Extreme ultraviolet light source

An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis or rotation and an ellipse in another. The source may have a temperature control mechanism operatively connected to the collector and operative to regulate the temperature of the respective shell members to maintain a temperature related geometry optimizing the glancing angle of incidence reflections from the respective shell members, or a mechanical positioner to position the shell members.

Discharge produced plasma EUV light source

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San Diego, CA, United States of America

Rodney D Simmons