Micron Technology Incorporated

Rodney D Morgan

Navjot Chhabra

Eric A Powell

A multiple connection socket assembly for operatively associating semiconductor device fabrication equipment with a plurality of external facilities. The multiple connection socket assembly includes a connective structure configured to substantially simultaneously connect at least two different external facilities selected from a power supply, a computer, a vacuum, a chemical source, a source of water vapor, a source of liquid water, a pressurized air source, a hydraulic fluid source, and a ventilation system. The connective structure itself may include interconnectable first and second members with corresponding connector elements disposed on the faces of each member. The connector elements of the first member are in communication with various conduits extending from corresponding external facilities, and the connector elements of the second member are in communication with various conduits extending into corresponding components of the semiconductor device fabrication equipment, and the connector elements are arranged in such a way that when the first and second members are interconnected, the corresponding pairs of connector elements align and engage. When the connector elements disposed upon the faces of the first and second members are engaged, each of the conduits extending from the various external facilities and their corresponding conduits extending into the components of the semiconductor device fabrication equipment communicate. Thus, the multiple connection socket assembly facilitates the substantially simultaneous connection or disconnection of the semiconductor device fabrication equipment to or from a plurality of external facilities, thereby reducing the time necessary to connect or disconnect such equipment to and from the various external facilities.

Multiple connection socket assembly for semiconductor fabrication equipment and methods employing same

A process for forming silicon dioxide, SiO.sub.2, or silicon nitride, Si.sub.3 N.sub.4, layers on selected substrates which includes reacting diethylsilane, C.sub.4 H.sub.12 Si, with a selected oxygen-containing compound or nitrogen-containing compound in a plasma enhanced chemical vapor deposition (PECVD) chamber. The conformality of the coatings thus formed is in the range of 85% to 98%. The diethylsilane liquid source for the associated gas flow processing system may be maintained and operated at a source temperature as low as room temperature.

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Eagle, ID, United States of America

Rodney D Morgan