Lucent Technologies Inc.

United States of America As Represented by the Secretary of the Air Force

At+t Corp.

At&t Bell Laboratories

Bell Telephone Laboratories

Advanced Technology Materials, Inc.

Agere Systems Guardian Corp.

Roderick Kent Watts

Louis Thomas Manzione

Ratnaji R Kola

Henry Miles O'Bryan

Karl Georg Hampel

Greg E Blonder

Jeffrey F Roeder

Robert J Cava

John Thomson, Jr

Gregory T Stauf

David B Fraser

Jueinai Raynien Kwo

Robert S Freund

Henry S Luftman

Robert C Wetzel

Eric W Seelig

Shang Y Hou

The specification describes a phase shifting microstrip device in which the ground plane electrode is formed on a substrate surface and a film of ferroelectric material with a thickness less than 200 &mgr;m is formed over the ground plane electrode. The microstrip electrode is formed over the film of ferroelectric material to produce a microstrip device with an operating voltage of less than 200 volts.

Microstrip phase shifters

The specification describes of multilevel printed circuit boards and a process for their manufacture in which capacitors and other passive components are buried between levels of the multilevel board. The capacitor in the multilevel structure is designed so that access is conveniently provided to connect from the parallel plate electrodes of the interlevel capacitor to the board surface or to another board level using plated through hole interconnects.

Embedded thin film passive components

The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO.sub.2 doping. Specifically, applicants have discovered sputtering Ta.sub.2 O.sub.5 in an oxygen-rich ambient at a temperature in excess of 450.degree. C. and preferably in excess of 550.degree. C., produces a new crystalline phase thin film having enhanced dielectric properties.

Method for making thin film tantalum oxide layers with enhanced

Ba--Sr--Ti-oxide dielectric material, with at least 60 atomic percent of the total content of the oxide being Ti, can have relatively high dielectric constant K (&gt;40 at 20.degree. C.) and relatively low second order voltage coefficient a.sub.2 of the dielectric constant (a.sub.2 &lt;100 PPM V.sup.2 at 20.degree. C.). In preferred embodiments the dielectric material has nominal composition (BA.sub.x Sr.sub.y Ti.sub.1--x--y)-oxide, with 1--x--y in the range 0.65-0.90, with both x and y greater than or equal to 0.05. Ba, Sr and Ti together typically comprise at least 99 atomic percent of the total metal content of the dielectric material.

Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide

The invention is directed to a process for fabricating a device with a junction thereon with a depth of 0.06 microns or less. The substrate also has a silicon dioxide material thereon. A dopant source is applied over a junction on the substrate. The substrate is then rapid thermal annealed to drive the dopant source into the substrate. The dopant source is then removed from the substrate using an etchant that does not contain a significant amount of HF.

Process for fabricating integrated circuit containing shallow junction

A light source, such as an LED, is provided with a multifaceted reflector to facilitate coupling of emitted light into an optical waveguide such as an optical fiber. In a preferred embodiment, a conventional LED fabricated on one side of a transparent substrate is provided with a series of integral concentric reflecting rings on the opposite side of the substrate. The rings reflect light diverging from the LED toward the central axis of an optical fiber light.

Light emitting diode with multifaceted reflector to increase coupling

In a fabrication sequence for VLSI MOS devices, an advantageous alignment mark for a wafer to be directly processed by electron beam lithography is made of tantalum disilicide protected by a silicon nitride layer.

Alignment marks for electron beam lithography

A method of aligning an x-ray mask to a pattern on a semiconductor slice utilizing an infrared light source and an alignment pattern pair on the mask and slice to automatically and precisely position the x-ray mask on the semiconductor slice.

Mask-slice alignment method

Growing community of inventors

Summit, NJ, United States of America

Roderick Kent Watts