Microchip Technology Inc.

Agileswitch, LLC

Robin Weber

Albert J Charpentier

Alan K Smith

Nitesh Satheesh

A gate-drive controller for a power semiconductor device includes a master control unit (MCU) and one or more comparators that compare the output signal of the power semiconductor device to a reference value generated by the MCU. The MCU, in response to a turn-off trigger signal, generates a first intermediate drive signal for the power semiconductor device and generates a second intermediate drive signal, different from the first drive signal, when a DSAT signal indicates that the power semiconductor device is experiencing de-saturation. The MCU generates a final drive signal for the power semiconductor when the output signal of the one or more comparators indicates that the output signal of the power semiconductor device has changed relative to the reference value. The controller may also include a timer that causes the drive signals to change in predetermined intervals when the one or more comparators do not indicate a change.

Gate drive control method for SiC and IGBT power devices to control desaturation or short circuit faults

Gate drive control system for SiC and IGBT power devices to control desaturation or short circuit faults

A gate-drive controller for a power semiconductor device includes a master control unit (MCU) and a comparator that compares output signal of the power semiconductor device to a reference value generated by the MCU. The MCU, in response to a turn-off trigger signal, generate a first intermediate drive signal for the power semiconductor device and generates a second intermediate drive signal, different from the first drive signal, when a DSAT signal indicates that the power semiconductor device is experiencing de-saturation. The MCU generates a final drive signal for the power semiconductor when the output signal of the comparator indicates that the output signal of the power semiconductor device has changed relative to the reference value.

Gate drive control system for SiC and IGBT power devices

The disclosed inventions relate to the field of power control electronics. More specifically the disclosed inventions pertain to Power Stack Control Systems which are used to control the generation of AC power from a DC or AC input voltage. The disclosed Power Stack Control Systems include a serial interface connection, the serial interface connection being in serial electrical communication with a plurality of power stacks, the plurality of power stacks comprising at least one interface board and at least one IGBT driver board, the at least one interface board being in parallel communication with at least one IGBT driver board.

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Philadelphia, PA, United States of America

Robin Weber