International Business Machines Corporation

Stmicroelectronics Gmbh

Advanced Micro Devices Corporation

Robin Van Den Nieuwenhuizen

John H Zhang

Laertis Economikos

Wei-Tsu Tseng

Bruce Bennett Doris

Werner A Rausch

Mahender Kumar

A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.

Method of repairing probe pads

A method for forming multiple self-aligned gate stacks, the method comprising, forming a first group of gate stack layers on a first portion of a substrate, forming a second group of gate stack layers on a second portion of the substrate adjacent to the first portion of the substrate, etching to form a trench disposed between the first portion and the second portion of the substrate, and filling the trench with an insulating material.

Method and structure for forming multiple self-aligned gate stacks for logic devices

Growing community of inventors

Ridgefield, CT, United States of America

Robin Van Den Nieuwenhuizen