Sarnoff Corporation

Robin Mark Adrian Dawson

Roger Green Stewart

Alfred C Ipri

Zilan Shen

Michael Gillis Kane

Peter Alan Levine

Taner Dosluoglu

James Harold Atherton

Robert Amantea

Fu-Lung Hsueh

Stephen John Connor

James Ya-Kong Hsu

A method and apparatus for generating charge from a light pulse. In one example, a light sensor includes an active region for generating an electric charge in response to a light pulse. A drift region is formed within a substrate and receives the electric charge from the light sensor. A spatial charge distribution is produced within the drift region in response to an electric field. The drift region includes an outer edge and an inner edge. The volume of the drift region decreases from the outer edge to the inner edge.

Method and apparatus for generating charge from a light pulse

A row-select circuit for an organic light emitting diode display propagates a gating pulse through a shift register. This gating pulse is synchronized with a system clock signal and is used to selectively apply a plurality of broadcast control signals to a selected row of pixels on the display. The line scanning circuitry is controlled to clear and autozero the pixels in the display either one line at a time or the entire image frame at a time. According to another aspect of the invention, the clearing of a row of pixels in the display is performed over several line intervals before the row is autozeroed and loaded with new values. According to yet another aspect of the invention, the broadcast control signals may be adapted to achieve the best performance for each display device.

Line scanning circuit for a dual-mode display

A circuit design technique polysilicon thin-film transistor (TFT) circuitry produces circuits that are relatively less sensitive to threshold variations among the TFT's than circuits designed using conventional techniques. The circuit is designed such that thin-film transistors that are sensitive to threshold variations are made larger than other thin-film transistors in the circuitry to minimize threshold variations among similar transistors implemented in the circuit. In one embodiment, a pixel structure for an active matrix display device implemented in polysilicon includes two transistors, a select transistor and a drive transistor. The drive transistor in the pixel structure is a thin film metal oxide silicon (MOS) transistor that includes a gate to source capacitance sufficient to hold an electrical potential which keeps the transistor in a conducting state for an image field interval. One embodiment of the pixel structure includes only the select transistor and the drive transistor. The pixel storage capacitance is entirely realized by the gate to source capacitance of the drive transistor. Another embodiment of the pixel structure includes a capacitor which is much smaller than the capacitor of a conventional active matrix pixel structure. This capacitor holds the pixel in a non-illuminated state when the drive transistor is turned off. This pixel structure may be used with any display technology that uses an active matrix and stores image data on a capacitance in the pixel, including without limitation, organic light emitting diodes, electroluminescent devices, and inorganic light emitting diodes.

Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage

A LED pixel structure that reduces current nonuniformities and threshold voltage variations in a &ldquo;drive transistor&rdquo;of the pixel structure is disclosed. The LED pixel structure incorporates a current source for loading data into the pixel via a data line. Alternatively, an auto zero voltage is determined for the drive transistor prior to the loading of data.

Active matrix light emitting diode pixel structure and concomitant method

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Princeton, NJ, United States of America

Robin Mark Adrian Dawson