Micron Technology Incorporated

Robin Lee Gilchrist

Rod C Langley

William J Crane

Michael S Wilhoit

Curtis S Jones

A semiconductor processing method of providing a polysilicon film having induced outer surface roughness includes, a) providing a polysilicon layer over a substrate, the polysilicon layer having an outer surface of a first degree of roughness; b) providing a layer of a refractory metal silicide over the outer surface of the polysilicon layer, the refractory metal silicide preferably being WSi.sub.x where 'x' is initially from 1.0 to 2.5, the WSi.sub.x layer and the polysilicon layer outer surface defining a first interface therebetween; c) annealing the substrate at a temperature and for a time period which are effective to transform the WSi.sub.x into a tetragonal crystalline structure and to transform the first interface into a different second interface, the WSi.sub.x layer not being in a tetragonal crystalline state prior to the anneal, the WSi.sub.x at the second interface having an increased value of 'x' from the initial value of 'x'; and d) etching the WSi.sub.x layer from the polysilicon layer at least to the second interface to leave an outer polysilicon surface having a second degree of roughness, the second degree of roughness being greater than the first degree of roughness. A capacitor having a conductive plate comprising a polysilicon film produced by the process is also disclosed.

Method of forming rough polysilicon surfaces suitable for capacitor

Method of forming rough polysilicon surfaces

A temperature control system to selectively control the temperature of specific areas of the chuck or electrode plate upon which a wafer is mounted during plasma etching, chemical vapor deposition and other such temperature dependent processes for the purpose of ultimately controlling the temperature of the semiconductor wafer. The temperature control system includes a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops. Each conduit is connected to its own inlet and outlet to allow a heating or cooling agent to flow independently through each conduit.

Area specific temperature control for electrode plates and chucks used

The process of the present invention comprises the addition of an adequate amount of argon gas in a dry etch system to clear bond pads of residual contaminants which form an undesired oxide coating on the bond pads. Carbon dioxide may be used as a carrier gas along with the argon gas. The process of the present invention preferably takes place in situ, following the silicon nitride pad etch in which fluorine-containing chemicals are used to form the bond pads.

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Boise, ID, United States of America

Robin Lee Gilchrist