Lsi Logic Corporation

Robi Banerjee

David T Price

Derryl J Allman

A semiconductor device wherein Si&mdash;Ge is the base of a bipolar transistor and a Silicon layer is the emitter. A method of making such a semiconductor device including steps of forming a Silicon dioxide layer on a Silicon substrate, using a photo resist application and exposure to define where a HBT device will be placed. Plasma etching the Silicon dioxide layer to define an undercut, epitaxially growing an Si&mdash;Ge layer and a Silicon layer, and continuing manufacture to form one or more bipolar and CMOS devices and define interconnect and passivation.

Implementation of Si-Ge HBT with CMOS process

A semiconductor device wherein some parts of a circuit are disposed on Si&mdash;Ge regions and others are implemented in Silicon substrate regions of the chip. The Si&mdash;Ge region provides that carrier flow is forced to the surface channel region which helps reduce short channel effects. A method of making such a semiconductor device is also provided and includes steps of forming a thermal oxide layer on a Silicon substrate, masking at least a portion of the thermal oxide layer, removing at least a portion of the thermal oxide layer in order to expose a portion of the Silicon substrate, epitaxially growing an Si&mdash;Ge layer on the exposed portion of the Silicon substrate, epitaxially growing a Silicon layer on the Si&mdash;Ge layer, and continuing manufacture of the device by forming a circuit on the Si&mdash;Ge regions and non-Si&mdash;Ge regions of the semiconductor device.

Growing community of inventors

Gresham, OR, United States of America

Robi Banerjee