Nxp B.v.

Ams International Ag

Koninklijke Philips Corporation N.v.

Asml Netherlands B.v.

III Holdings 1, LLC

Koninklijke Phillips Electronics N.v.

Intrinsic Id B.v.

M4si B.v.

Mxp B.v.

Robertus Adrianus Maria Wolters

Erwin Rinaldo Meinders

Martijn Henri Richard Lankhorst

Petra Elisabeth De Jongh

Franciscus Petrus Widdershoven

Roel Daamen

Youri Victorovitch Ponomarev

Pim Theo Tuyls

Hermanus L Peek

Liesbeth Van Pieterson

Andreas Bernardus Maria Jansman

Frederik Willem Maurits Vanhelmont

Edwin Roks

Rene Theodora Hubertus Rongen

Ronald Dekker

Mareike K Klee

Levinus Pieter Bakker

Mark Kroon

Jeroen Jonkers

Boris Skoric

Michael Cornelis Van Beek

Theodorus Hubertus Josephus Bisschops

Thomas Andreas Maria Kevenaar

Jacob Christopher Hooker

Aarnoud Laurens Roest

Wilhelmus Sebastianus Marcus Maria Ketelaars

Mark Isler

Robert James Lander

Yukiko Furukawa

Johannes Van Wingerden

Linda Van Leuken-Peters

Stefan Maubach

Klaas Heres

Rensinus Cornelis Strijbos

Johannes Reinder Marc Luchies

Fredericus Christiaan Van Den Heuvel

Rudiger Gunter Mauczok

Adrianus Johannes Henricus Maas

Anouk Maria Van Graven Claassen

The electric device () has a body () with a resistor () comprising a phase change material being changeable between a first phase and a second phase. The resistor () has an electric resistance which depends on whether the phase change material is in the first phase or the second phase. The resistor () is able to conduct a current for enabling a transition from the first phase to the second phase. The phase change material is a fast growth material which may be a composition of formula SbMwith c satisfying 0.05&#x2264;c&#x2264;0.61, and M being one or more elements selected from the group of Ge, In, Ag, Ga, Te, Zn and Sn, or a composition of formula SbTeXwith a, b and 100&#x2212;(a+b) denoting atomic percentages satisfying 1&#x2264;a/b&#x2264;8 and 4&#x2264;100&#x2212;(a+b)&#x2264;22, and X being one or more elements selected from Ge, In, Ag, Ga and Zn.

Electric device comprising phase change material

Disclosed is an integrated circuit comprising a substrate carrying a plurality of circuit elements; a metallization stack interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion; a passivation stack covering the metallization stack; and a sensor including a sensing material on the passivation stack, said sensor being coupled to the first metal portion by a via extending through the passivation stack. A method of manufacturing such an IC is also disclosed.

Integrated circuit with sensor and method of manufacturing such an integrated circuit

The method of manufacturing a solar cell comprises the steps of: (a) providing the semiconductor substrate in a deposition chamber of a vapour deposition apparatus, which semiconductor substrate comprises a passivation layer at a first side thereof which passivation layer is patterned to define contact areas at which the copper-containing conductor is present; (b) supplying a gaseous silicon species into the deposition chamber, resulting in the formation of a surface layer of a copper silicide on a surface of the copper-containing conductor and in the formation of amorphous silicon on top of the passivation layer, and (c) providing a protective layer of an insulating silicon compound on the surface layer, wherein the protective cover comprising both the surface layer and the protective layer.

Protective cover for a copper containing conductor

Disclosed is an integrated circuit comprising a substrate () carrying a plurality of circuit elements; a metallization stack () interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (); a passivation stack () covering the metallization stack; and a sensor including a sensing material () on the passivation stack, said sensor being coupled to the first metal portion by a via () extending through the passivation stack. A method of manufacturing such an IC is also disclosed.

The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, () an electrically insulating first cover layer () which partly or fully covers the top capacitor electrode () and is made of a lead-containing dielectric material, and a top barrier layer () on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer () on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer () on top.

3D integration of a MIM capacitor and a resistor

The invention relates to a method for proving authenticity of a prover PRV to a verifier VER, the method comprising generating a secret S using a physical token by the prover PRV. Obtaining a public value PV by the verifier, where the public value PV has been derived from the secret S using a function for which the inverse of said function is computationally expensive. The method further comprising a step for conducting a zero knowledge protocol between the prover PRV and the verifier VER in order to prove to the verifier VER, with a pre-determined probability, that the prover PRV has access to the physical token, where the prover PRV makes use of the secret S and the verifier VER makes use of the public value PV. The invention further relates to a system employing the method, and an object for proving authenticity.

Method, apparatus and system for verifying authenticity of an object

The electric device () has a body () with a resistor () comprising a phase change material being changeable between a first phase and a second phase. The resistor () has an electric resistance which depends on whether the phase change material is in the first phase or the second phase. The resistor () is able to conduct a current for enabling a transition from the first phase to the second phase. The phase change material is a fast growth material which may be a composition of formula SbMwith c satisfying 0.05&#x2266;c&#x2266;0.61, and M being one or more elements selected from the group of Ge, In, Ag, Ga, Te, Zn and Sn, or a composition of formula SbTeXwith a, b and 100&#x2212;(a+b) denoting atomic percentages satisfying 1&#x2266;a/b&#x2266;8 and 4&#x2266;100&#x2212;(a+b)&#x2266;22, and X being one or more elements selected from Ge, In, Ag, Ga and Zn.

An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.

Magnetic field sensor

A method of manufacturing a Bulk Acoustic Wave device by providing an active layer formed of an electro-mechanical transducer material, providing a first electrode on the active layer, defining a first electrode portion of the device, whereby a remaining portion of the device is defined around the first electrode, providing a stop-layer on the first electrode, depositing a first dielectric layer on the resultant structure, and planarizing the first dielectric layer until the stop-layer on the first electrode is exposed.

Method of manufacturing a bulk acoustic wave device

The electric device according to the invention has a resistor comprising a layer of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resistivity. The phase change material is a fast growth material. The electric device further comprises a switching signal generator for switching the resistor between at least three different electrical resistance values by changing a corresponding portion of the layer of the phase change material from the first phase to the second phase.

A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas is used which dissociates in low-weight ions. The electronic device is particularly an integrated circuit.

Method of manufacturing an electronic device

The semiconductor device of the invention includes a circuit and a protecting structure. It is provided with a first and a second security element and with an input and an output. The security elements have a first and a second impedance, respectively, which impedances differ. The device is further provided with a measuring unit a processing unit and a connection unit. The processing unit transform any first information received into a specific program of measurement. Herewith a challenge-response mechanism is implemented in the device.

Semiconductor device, method of authentifying and system

The semiconductor device () of the invention comprises a circuit covered by a passivation structure (). It is provided with a first and a second security element (A,B) which comprise local areas of the passivation structure (), and with a first and a second electrode (). The security elements (A,B) have a first and a second impedance, respectively, which impedances differ. This is realized in that the passivation structure has an effective dielectric constant that varies laterally over the circuit. Actual values of the impedances are measured by measuring means and transferred to an access device by transferring means. The access device comprises or has access to a central database device for storing the impedances. The access device furthermore may compare the actual values with the stored values of the impedances in order to check the authenticity or the identity of the semiconductor device.

Semiconductor device, card, system, and methods of initializing and checking the authenticity and the identity of the semiconductor device

Consistent with an example embodiment, a method of manufacturing a semiconductor device comprises MOS transistors having gate electrodes formed in a number of metal layers deposited upon one another. Active silicon regions having a layer of a gate dielectric and field-isolation regions insulating these regions from each other are formed in a silicon body. Then, a layer of a first metal is deposited in which locally, in a part of the active regions, nitrogen is introduced. On the layer of the first metal, a layer of a second metal is then deposited, after which the gate electrodes are etched in the metal layers. Before nitrogen is introduced into the first metal layer, an auxiliary layer of a third metal permeable to nitrogen is deposited an the first metal layer. Thus, the first metal layer can be nitrided locally without the risk of damaging the underlying gate dielectric.

Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another

A lithographic projection apparatus is disclosed. The apparatus includes a support structure constructed to support a patterning structure. The patterning structure is adapted to pattern a beam of radiation according to a desired pattern. The apparatus also includes a substrate holder that is constructed to hold a substrate, a projection system that is constructed and arranged to project the patterned beam onto a target portion of the substrate, and a downstream radical source that is connected to a gas supply and is configured to provide a beam of radicals onto a surface to be cleaned.

Lithographic apparatus and device manufacturing method

Growing community of inventors

Eindhoven, Netherlands

Robertus Adrianus Maria Wolters