Nxp B.v.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Robertus A M Wolters

Johannes A J Van Geloven

Roel Daamen

Pim Theo Tuyls

Pascal Bancken

Victor Zieren

Julien M M Michelon

Nynke Verhaegh

Nynke Verhaech

Martinus P M Maas

Jinesh B P Kochupurackal

Michael A A Zandt

The invention relates to an integrated circuit comprising a substrate having a first side and a second opposing side. An electronic circuit (EC) is provided at the first side (S) of the substrate, wherein the electronic circuit (EC) comprises at least one magnetic field sensor (Snsr, Snsr, Snsr, Snsr, Snsr). The integrated circuit further comprises a magnetizable region (MR) provided on the second side (S) of the substrate (SUB) by using a wafer-level type deposition processing step. The magnetic moment of the magnetizable region (MR) is configurable for generating a magnetic field (H, H) detectable at the location of the at least one magnetic field sensor (Snsr, Snsr, Snsr, Snsr, Snsr). The integrated circuit constitutes a very simple construction and enables a strongly miniaturized solution which is, because of its reduced dimensions well suitable for being used in bank cards. An attempt to remove the integrated circuit according to the invention from its environment (e.g. a bank card) may result in the magnetizable region (MR) getting damaged (partially removed) or even completely removed. The invention provides a first level of security against external attack. Embodiments of the invention provide higher security levels. Various magnetic field sensors are illustrated which may be advantageously integrated in the integrated circuit. The invention also relates to a card provided with such integrated circuit. The card in accordance with the invention is more secure. The invention further relates to a method of initializing such integrated circuit and a method of checking the authenticity of such integrated circuit.

Magnetic detection of back-side layer

A phase change memory cell, e.g. a line-cell (), and fabrication thereof, the cell comprising: two electrodes (); phase change memory material () and a dielectric barrier (). The dielectric barrier () is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phase change memory material (). A contact () made of phase change memory material may also be provided. The dielectric barrier () is substantially uniform e.g. of substantially uniform thickness, e.g. &#x2267;5 nm.

Phase change memory cells and fabrication thereof

The invention relates to a tamper-resistant semiconductor device comprising a substrate () comprising an electronic circuit arranged on a first side thereof. An electrically-conductive protection layer () is arranged on a second side of the substrate () opposite to the first side. At least three through-substrate electrically-conductive connections () extend from the first side of the substrate () into the substrate () and in electrical contact with the electrically-conductive protection layer () on the second side of the substrate (). A security circuit is arranged on the first side connected to the through-substrate electrically-conductive connections () and is arranged for measuring at least two resistance values (R, R, R, R, R, R) of the electrically-conductive protection layer () through the through-substrate electrically-conductive connections (). The security circuit is further arranged for comparing the measured resistance values (R, R, R, R, R, R) with reference resistance values.

Tamper-resistant semiconductor device and methods of manufacturing thereof

An integrated circuit has an inhomogeneous protective layer or coating over a circuit to be protected, and a sensing circuit () arranged to sense a first impedance of a part of the protective coating compared to a reference impedance (CO) located on the integrated circuit. The sensing circuit is able to measure a change in the first impedance, e.g. caused by tampering. The sensing circuit has an amplifier (OTA) having a feedback loop, such that the impedance being sensed is in the feedback loop. The sensing circuit can be incorporated in an oscillator circuit (OTA, Comp) so that the frequency depends on the impedance. Where the impedance is a capacitance, sensing electrodes adjacent to the protective layer or coating, form the capacitance. The electrodes can be arranged as selectable interdigitated comb structures, so that the protective layer or coating extends in between the teeth of the comb structures.

Sensing circuit for devices with protective coating

A damascene process is described using a copper fill process to fill a trench (). The copper fill () is started with a deposited seed layer which includes () copper and titanium. Some titanium migrates to the surface during the copper fill process. The structure is annealed in a nitrogen atmosphere which creates a self-aligned TiN barrier () at the surface of the copper fill (). Air gaps () may be created in the same annealing process. The process may be used to form a multilayer structure.

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Eindhoven, Netherlands

Robertus A M Wolters