Raytheon Company

Roberto W Alm

Angelo M Puzella

John B Francis

Shahed Reza

Patricia S Dupuis

Joseph A Licciardello

Kenneth S Komisarek

Donald A Bozza

Edward Swiderski

A microstrip MMIC chip flip-chip mounted to a printed circuit board with conductive vias passing through the chip to electrical connect a ground plane of the microstrip MMIC chip to a ground conductor of the printed circuit board.

Flip-chip mounted microstrip monolithic microwave integrated circuits (MMICs)

A monolithic microwave integrated circuit structure having a semiconductor substrate structure with a plurality of active devices and a microwave transmission line having an input section, an output section and a interconnecting section electrically interconnecting the active devices on one surface and a metal layer on an opposite surface overlaying the interconnection section and absent from overlaying at least one of the input section and the output section.

Monolithic microwave integrated circuit

A mixed-signal, multilayer printed wiring board fabricated in a single lamination step is described. The PWB includes one or more radio frequency (RF) interconnects between different circuit layers on different circuit boards which make up the PWB. The PWB includes a number of unit cells with radiating elements and an RF cage disposed around each unit cell to isolate the unit cell. A plurality of flip-chip circuits are disposed on an external surface of the PWB and a heat sink can be disposed over the flip chip components.

Panel array

A field effect transistor structure includes a single crystal substrate having: a source, gate and drain electrodes disposed on an upper surface of the substrate, the gate electrode having a region thereof disposed between a region of the drain electrode and a region of the source electrode; a ground conductor disposed on a lower surface of the substrate; a plurality of electrically conductive vias passing through the substrate, each one of the vias having one end electrically connected to a different region of the ground conductor and having another end electrically connected to the gate electrode. The plurality of electrically conductive vias provide parallel and symmetric connections between the gate electrode and the ground conductor.

Monolithic microwave integrated circuit compatible FET structure

A radio frequency oscillator having: a resonant circuit; a gain element coupled in feedback relationship with the resonant circuit; and a variable reactance device, such as a varactor diode, adapted for coupling to a control signal for varying the reactance of the device. The variable reactance device is coupled to the resonant circuit with a coupling factor less than one. The resonant circuit comprises a planar microstrip transmission line structure. The varactor diode is coupled to the microstrip transmission line through a strip conductor disposed adjacent to, and dielectrically spaced from, a strip conductor of the resonant circuit. In one embodiment, the strip conductors are disposed in a side-by-side, dielectrically spaced relationship. In another embodiment, the strip conductors are disposed in a face-to-face, dielectrically spaced relationship.

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Windham, NH, United States of America

Roberto W Alm