Globalwafers Co., Ltd.

Corner Star Limited

Memc Electronic Materials, Inc.

Roberto Scala

Stephan Haringer

Matteo Pannocchia

Marco D'Angella

Paolo Tosi

Luigi Bonanno

Armando Giannattasio

Valentino Moser

Franco Battan

Robert J Falster

Vladimir V Voronkov

Maria Porrini

Martin Jeffrey Binns

Paolo Collareta

Jesse Samsonov Appel

Maria Giovanna Pretto

Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.

Crystal pulling systems having a cover member for covering the silicon charge and methods for growing a melt of silicon in a crucible assembly

Crystal pulling systems having a cover member for covering the silicon charge

A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.

Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material

Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed. The dopant feed system include a dopant conduit having a porous partition member disposed across the dopant conduit. Solid dopant falls onto the partition member where it sublimes. The sublimed dopant is carried by inert gas through the partition member to contact and dope the silicon melt.

Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant

Methods for preparing a doped ingot

A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.

Fabrication of indium-doped silicon by the czochralski method

A doping system for introducing liquid dopant into a melt of semiconductor or solar-grade material includes a dopant reservoir for holding dopant and a feeding tube. The dopant reservoir includes a body and a tapered end defining an opening having a smaller cross-sectional area than a cross-sectional area of the body. The feeding tube includes a first end extending from the opening of the reservoir, a second end distal from the first end, an angled tip disposed at the second end of the feeding tube, a first restriction for inhibiting the passage of solid dopant through the feeding tube, and a second restriction for controlling the flow of liquid dopant, the second restriction disposed near the second end of the feeding tube.

Liquid doping systems and methods for controlled doping of single crystal semiconductor material

The present invention is a method for quantitatively measuring nitrogen in Czochralski silicon based on the detection of one or more N&mdash;O complexes by means of low temperature Fourier Transform infrared spectroscopy (LT-FTIR) in the far infrared spectral range (FIR).

Analytical method to measure nitrogen concentration in single crystal silicon

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Merano, Italy

Roberto Scala