Wolfspeed, Inc.

Roberto M Schupbach

Brice McPherson

Brandon Passmore

Jennifer Stabach-Smith

Shashwat Singh

Shadi Sabri

Rahul R Potera

Jianwen Shao

Prasanna Obala Bhuvanesh

Power semiconductor devices comprise a gate pad, a gate bus, and a gate resistor that is electrically interposed between the gate pad and the gate bus and comprises a wide band-gap semiconductor material region.

Semiconductor devices having on-chip gate resistors

Power module

A power module is provided with a substrate, power devices, and a housing. The power devices are mounted on device pads of the substrate and arranged to provide a power circuit having a first input, a second input, and at least one output. First and second power terminals provide first and second inputs for the power circuit. At least one output power terminal provides at least one output. The housing encompasses the substrate, the power devices, and portions of the first and second input power terminals as well as the at least one output power terminal. The first and second input power terminals extend out of a first side of the housing, and the at least one output power terminal extends out of a second side of the housing, the first side being opposite the second side.

Compact power module

A power module is provided with a substrate, power devices, and a housing. The power devices are mounted on device pads of the substrate and arranged to provide a power circuit having a first input, a second input, and at least one output. First and second power terminals provide first and second inputs for the power circuit. At least one output power terminal provides at least one output. The housing encompasses the substrate, the power devices, and portions of the first and second input power terminals as well as the at least one output power terminal.

Dual inline power module

The present disclosure describes a power module having a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies. The substrate has a top surface with a first trace and a second trace. The first plurality of vertical power devices and the second plurality of vertical power devices are electrically coupled to form part of a power circuit. The first plurality of vertical power devices is electrically and mechanically directly coupled between the first trace and a bottom of a first elongated bar of the first terminal assembly. The second plurality of vertical power devices are electrically and mechanically directly coupled between the second trace and a bottom of a second elongated bar of the second terminal assembly.

Growing community of inventors

Raleigh, NC, United States of America

Roberto M Schupbach