Stmicroelectronics S.r.l.

Roberto Cammarata

Antonino Schillaci

Paola Maria Ponzio

A semiconductor MOS device having an epitaxial layer with a first conductivity type formed by a drain region and by a drift region. The drift region accommodates a plurality of first columns with a second conductivity type and a plurality of second columns with the first conductivity type, the first and second columns alternating with each other and extending on the drain region. Insulated gate regions are each arranged on top of a respective second column; body regions having the second conductivity type extend above and at a distance from a respective first column, thus improving the output capacitance Cof the device, for use in high efficiency RF applications.

Charge balance semiconductor device, in particular for high efficiency RF applications, and manufacturing process thereof

An electric transformer device (balun) is formed on a support plate having a first base face and an opposite second base face. The balun includes a first port () connectable to an electrical line for a differential signal and a second port connectable to an electrical line for a single-ended signal. A first printed conductive track is associated to the first base face of the support plate for connecting the first port to the second port. A printed conductive path is associated to the second base face of the support plate for connecting the first port to the second port. The printed conductive path is formed of a symmetric second and third printed conductive tracks.

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Catania, Italy

Roberto Cammarata