Integrated Device Technology, Inc.

Renesas Electronics America Inc.

Roberto Aparicio Joo

Victor Korol

Naveen Krishna Yanduru

Shawn Bawell

Hojung Ju

John Zhao

Hui Henry Li

Mohsin Asif

Jason May

An apparatus includes an amplifier circuit and a protection circuit. The amplifier circuit may be configured to generate an output signal by amplifying an input signal received at an input port. The input signal may be a radio-frequency signal. The protection circuit may be configured to (i) generate a detection signal by detecting when a level of the input signal exceeds a corresponding threshold, where the level is a power level, a voltage level or both, (ii) route the input signal away from the input port of the amplifier circuit and disable the amplifier circuit both in response to the detection signal being continuously active at least a first time duration and (iii) route the input signal to the input port of the amplifier circuit and enable the amplifier circuit both in response to the detection signal being continuously inactive at least a second time duration.

Real-time and adaptive radio-frequency power protection

An apparatus includes an amplifier and a bias network. The amplifier generally has a predefined linear range. The bias network is generally connected to an input of the amplifier. The bias network generally comprises a linearizer configured to provide gain expansion and extend linearity of the amplifier beyond the predefined linear range.

Power amplifier biasing network providing gain expansion

An apparatus includes a device comprising a semiconductor junction configured to generate a reference voltage, a voltage divider circuit, a comparator circuit, and a first output circuit. The voltage divider circuit may be configured to generate a first predetermined threshold voltage in response to the reference voltage. The comparator circuit may be configured to generate a first intermediate signal in response to a comparison of the first predetermined threshold voltage and an input signal. The first output circuit may be configured to generate a first output signal in response to the first intermediate signal.

Digital logic compatible inputs in compound semiconductor circuits

An apparatus comprises a first RF port, a second RF port, a first resonator circuit and at least one second resonator circuit. The first resonator circuit and the second resonator circuit may be connected between the first RF port and the second RF port. The first resonator circuit may comprise a first inductor, a first capacitor, and a first stacked switch device. The second resonator circuit may comprise a second inductor, a second capacitor, and a second stacked switch device. The first capacitor and the first stacked switch device may be coupled in series across the first inductor. The second capacitor, the second inductor, and the second stacked switch device may be connected in parallel.

High power silicon on insulator switch

A method of implementing a radio frequency (RF) switch comprises the steps of forming a first switch device on an integrated circuit substrate, forming a second switch device on the integrated circuit substrate, connecting the first switch device between a first pad and a second pad of the integrated circuit, connecting the second switch device between the second pad and a third pad of the integrated circuit, directly connecting a first control pad of the integrated circuit for receiving a first digital control signal to a control terminal of the first switch device, and directly connecting a second control pad of the integrated circuit for receiving a second digital control signal to a control terminal of the second switch device. A threshold voltage of the first and second switch devices is generally modified to allow being directly driven by the first digital control signal or the second digital control signal.

RF switch with digital gate threshold voltage

An apparatus includes one or more field effect transistors configured as a switch. Each of the one or more field effect transistors comprises one or more source diffusions, one or more drain diffusions, and one or more gate fingers. Each of the one or more gate fingers is disposed between a source diffusion and a drain diffusion. A first electrical connection to the one or more source diffusions is made using one or more source electrodes that extend from a first end for a first length along a long axis of the source diffusions. A second electrical connection to the one or more drain diffusions is made using one or more drain electrodes that extend from a second end for a second length along a long axis of the drain diffusions. The first length of the one or more source electrodes and the second length of the one or more drain electrodes are generally selected to avoid juxtaposition of the one or more source electrodes and the one or more drain electrodes.

Method of boosting RON*COFF performance

An apparatus includes an amplifier and a gain control circuit. The amplifier may be configured to provide multiple gain steps. The gain control circuit may be configured to provide fast and precise changes between the multiple gain steps of the amplifier. The gain control circuit may be further configured to change an impedance of the amplifier to switch between the gain steps. The gain control circuit may be further configured to compensate for changes in frequency response related to changing the impedance. The gain control circuit may be further configured to inject a complementary charge to an input of the amplifier to correct a bias voltage deviation and a transient caused by the gain control circuit.

Ultrafast and precise gain control step in RF amplifiers

An apparatus comprises an input port, an output port, and a resonant receive switch circuit. The resonant receive switch circuit may be coupled between the input port and the output port. The resonant receive switch circuit may comprise a first switch, a second switch, and an input matching circuit. When the first and the second switches are in a non-conducting state, a signal at the input port is passed to the output port. When the first and the second switches are in a conducting state, the signal at the input port is prevented from reaching the output port.

Transceiver resonant receive switch

An apparatus comprises an amplifier having a predefined linear range and a shunt load. The shunt load may be connected to an output, an input, or between gain stages of the amplifier. An impedance of the shunt load dynamically varies in response to a level of a signal presented at a node formed by interconnection of the shunt load and the amplifier, extending linearity of the amplifier beyond the predefined range.

RF amplifier linearity enhancement with dynamically adjusted variable load

An apparatus comprises an input port, an output port, and a resonant receive switch circuit. The resonant receive switch circuit may be coupled between the input port and the output port. The resonant receive switch circuit may comprise a switch and an input matching circuit. When the switch is in a non-conducting state, a signal at the input port is passed to the output port. When the switch is in a conducting state, the signal at the input port is prevented from reaching the output port.

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San Diego, CA, United States of America

Roberto Aparicio Joo