Beijing Apollo Ding Rong Solar Technology Co., Ltd.

Miasole

Robert Zubeck

Neil Mackie

John Frederick Corson

Ron Rulkens

Mats Larsson

Robert D Tas

Weijie Zhang

Alex Austin

Korhan Demirkan

Jochen Titus

Swati Sevanna

Randy Dorn

Asit Rairkar

Ajay Saproo

Dan Vitkavage

Daniel R Juliano

A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

Photovoltaic cell with high efficiency CIGS absorber layer with low minority carrier lifetime and method of making thereof

Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof

A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target.

Method for alkali doping of thin film photovoltaic materials

Growing community of inventors

Los Altos, CA, United States of America

Robert Zubeck