Sunpower Corporation

Total Marketing Services

Maxeon Solar Pte. Ltd.

Robert Woehl

Nils-Peter Harder

Taeseok Kim

Richard Hamilton Sewell

Thomas Pass

Benjamin I Hsia

David Fredric Joel Kavulak

Mohamed A Elbandrawy

Gabriel Harley

Matthieu Moors

Michel Arsène Olivier Ngamo Toko

Jens-Dirk Moschner

Jens Dirk Moschner

Yu-Chen Shen

Paul Loscutoff

David Aaron Randolph Barkhouse

Michael Cudzinovic

Kieran Mark Tracy

Taiqing Qiu

Amjad Deyine

Mukul Agrawal

Approaches for fabricating wire-based metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal wires. Each metal wire of the plurality of metal wires is parallel along a first direction to form a one-dimensional layout of a metallization layer for the solar cell.

Wire-based metallization for solar cells

Laser foil trim approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes attaching a metal foil sheet to a surface of a wafer to provide a unified pairing of the metal foil sheet and the wafer, wherein the wafer has a perimeter and the metal foil sheet has a portion overhanging the perimeter. The method also includes laser scribing the metal foil sheet along the perimeter of the wafer using a laser beam that overlaps the metal foil sheet outside of the perimeter of the wafer and at the same time overlaps a portion of the unified pairing of the metal foil sheet and the wafer inside the perimeter of the wafer to remove the portion of the metal foil sheet overhanging the perimeter and to provide a metal foil piece coupled to the surface of the wafer.

Laser foil trim approaches for foil-based metallization for solar cells

Multi-layer sputtered metal seed for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. In an example, a solar cell includes a substrate. A semiconductor region is disposed in or above the substrate. A conductive contact is disposed on the semiconductor region and includes a seed material stack in contact with the semiconductor region. The seed material stack includes a first aluminum layer having a first crystallinity and disposed on the semiconductor layer, and a second aluminum layer having a second crystallinity and disposed on and having an interface with the first aluminum layer. The first crystallinity is different from the second crystallinity.

Multi-layer sputtered metal seed for solar cell conductive contact

Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.

Solar cell having Ti- or Ta-containing thermal and diffusion barrier layer for foil-based metallization

Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.

Sputter tool

Fabricating a semiconductor device can include forming a metal seed region over a substrate. The method can include forming a mask over a first portion of the metal seed region. The method can also include forming a metal region over the metal seed region and removing the mask. The method can include forming metal contact fingers on the semiconductor device, where the forming includes etching the first portion of the metal seed region with an etchant comprising an acid, an oxidizer and chloride ions.

Etching techniques for semiconductor devices

Method of using laser welding to ohmic contact of metallic thermal and diffusion barrier layer for foil-based metallization of solar cells

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San Jose, CA, United States of America

Robert Woehl