Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Robert Walter

Karl Engl

Markus Maute

Korbinian Perzlmaier

Franz Eberhard

Sebastian Taeger

Johannes Stocker

Ralph Wirth

Guido Weiss

Stefanie Rammelsberger

Magnus Ahlstedt

Kai Gehrke

Michael Schmal

Stefan Illek

Wolfgang Schmid

Reiner Windisch

Martin Mandl

Roland Zeisel

Jens Mueller

Johannes Völkl

Markus Broell

Wilhelm Stein

Christian Rumbolz

Dieter Eissler

Michael Huber

Vincent Grolier

Stefan Hartauer

Christoph Schwarzmaier

Benjamin Michaelis

Christoph Stephan

Roland Stieglmeier

Oliver Kus

A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Method for producing an optoelectronic component, and optoelectronic component

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer

A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.

Method of producing an electronic component

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Optoelectronic semiconductor chip

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Light emitting diode chip

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.

An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

An optoelectronic semiconductor body () having an active semiconductor layer sequence () and a reflective layer system () is described. The reflective layer system () comprises a first radiation-permeable layer (), which adjoins the semiconductor layer sequence (), and a metal layer () on the side of the first radiation-permeable layer () facing away from the semiconductor layer sequence (). The first radiation-permeable layer () contains a first dielectric material. Between the first radiation-permeable layer () and the metal layer () there is disposed a second radiation-permeable layer () which contains an adhesion-improving material. The metal layer () is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer () is improved in comparison with the adhesion on the first dielectric material.

Optoelectronic semiconductor bodies having a reflective layer system

A radiation-emitting body comprising a layer sequence, having an active layer () for generating electromagnetic radiation, having a reflection layer (), which reflects the generated radiation, and having at least one intermediate layer () arranged between the active layer () and the reflection layer (). In this case, the active layer () has a roughening on an interface () directed toward the reflection layer (), and the reflection layer () is substantially planar at an interface () directed toward the active layer (). Also disclosed is a method for producing a radiation-emitting body, which involves forming a layer sequence on a substrate having an active layer () for generating electromagnetic radiation. In this case, the method comprises roughening an interface () on the active layer (), and forming at least one intermediate layer () and a reflection layer ().

Radiation emitting body and method for producing a radiation-emitting body

An optoelectronic semiconductor component comprising a semiconductor body () and a current spreading layer () is specified. The current spreading layer () is applied to the semiconductor body () at least in places. In this case, the current spreading layer () contains a metal () that forms a transparent electrically conductive metal oxide () in the current spreading layer, and the concentration (x) of the metal () decreases from that side of the current spreading layer () which faces the semiconductor body () toward that side of said current spreading layer which is remote from the semiconductor body (). A method for producing such a semiconductor component is also disclosed.

Optoelectronic semiconductor component with current spreading layer

In a method for producing at least at least one area () with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (), a ZnO layer () is applied to the area () of the semiconductor layer () and subsequently annealed at a temperature preferably between 300&#xb0; C. and 500&#xb0; C. The ZnO layer () is preferably deposited on the III-V semiconductor layer () at a temperature of less than 150&#xb0; C., preferably at a temperature greater than or equal to 25&#xb0; C. and less than or equal to 120&#xb0; C. The area () with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone () and a connecting contact () in order to reduce current injection into the areas of the active zone () located opposite to the connecting contact ().

Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element

Growing community of inventors

Parsberg, Germany

Robert Walter