Corning Incorporated

Other

Robert W Sparrow

Charlene Marie Smith

Nicholas Francis Borrelli

Douglas Clippinger Allan

Paul Michael Then

Michael A Pell

David F Anderson

Robert LeRoy Maier

Steven E Gianoulakis

The invention is directed to a coated metal fluoride crystals that are resistant to laser-induced damage by a below 250 nm UV laser beam; methods of making such coated crystals, and the use of such coated crystals. The method includes the steps of providing an uncoated metal fluoride crystal of general formula MF, where M is beryllium, magnesium, calcium, strontium and barium, and mixtures thereof, and coating the uncoated metal fluoride crystal with a coating of a selected material to thereby form a coated metal material resistant to laser induced damage. Preferred coating materials include MgF, MgFdoped fused silica and fluorine doped fused silica.

Coated optics to improve durability

The invention relates to an excimer laser which includes a source of a laser beam and one or more windows which include barium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include barium fluoride and a source for annealing the one or more windows. Another aspect of the invention relates to a method of producing a predetermined narrow width laser beam.

Barium fluoride high repetition rate UV excimer laser

The invention provides a UV below 200 nm lithography method utilizing mixed calcium strontium fluoride crystals. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed calcium strontium cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of calcium strontium cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the lithography pattern and projecting the lithography pattern with the fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals, optical element blanks thereof and optical lithography elements.

Photolithographic element blank calcium strontium fluoride UV transmitting mixed fluoride crystal with minimized spatial dispersion

The invention provides a &gE;4 kHz repetition rate argon fluoride excimer laser system for producing an UV wavelength 193 nm output. The &gE;4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge at a pulse repetition rate &gE;4 kHz. The &gE;4 kHz repetition rate argon fluoride excimer laser chamber includes magnesium fluoride crystal optic windows for outputting the 193 nm discharge as a &gE;4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light a fluence &gE;40 mj/cm /pulse and a 42 mm crystal 120 nm transmission of at least 30%.

High repetition rate excimer laser system

The invention relates to an High Repetition Rate UV Excimer Laser which includes a source of a laser beam and one or more windows which include magnesium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include magnesium fluoride and a source for annealing the one or more windows. Another aspect of the invention relates to a method of producing a predetermined narrow width laser beam.

High repetition rate UV excimer laser

The present invention provides below 160 nm optical lithography crystal materials for VUV optical lithography systems and processes. The invention provides fluoride optical lithography crystals for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography photons. The present invention provides methods of making below 160 nm optical lithography crystal materials for below 160 nm VUV optical lithography systems and processes.

Below 160NM optical lithography crystal materials and methods of making

The invention provides a UV below 200 nm lithography method. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of alkaline earth cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the lithography pattern and projecting the lithography pattern with the cubic fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals and forming optical element therefrom.

Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion

The present invention provides fluoride lens crystals for VUV optical lithography systems and processes. The invention provides a barium fluoride optical lithography crystal for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography photons. The invention includes a barium fluoride crystalline material for use in dispersion management of below 160 nm optical lithography processes.

Making a dispersion managing crystal

A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF,crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing. An embodiment of the present invention comprises a secondary heater incorporated into a conventional crystal growth and annealing apparatus. The secondary heater supplies heat to minimize the temperature gradients in the crystal during the annealing process. The secondary heater can mount near the bottom of the crucible to effectively maintain appropriate temperature gradients.

Crystal growth and annealing method and apparatus

The use of divalent fluoride dopants in scintillator materials comprising cerium fluoride is disclosed. The preferred divalent fluoride dopants are calcium fluoride, strontium fluoride, and barium fluoride. The preferred amount of divalent fluoride dopant is less than about two percent by weight of the total scintillator. Cerium fluoride scintillator crystals grown with the addition of a divalent fluoride have exhibited better transmissions and higher light outputs than crystals grown without the addition of such dopants. These scintillators are useful in radiation detection and monitoring applications, and are particularly well suited for high-rate applications such as positron emission tomography (PET).

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Sturbridge, MA, United States of America

Robert W Sparrow