Semequip, Inc.

Giner Electrochemical Systems, LLC

Tokyo Electron Limited

Eclipse Ion Technology, Inc.

Robert W Milgate, Iii

Thomas N Horsky

Wade Krull

Dale Conrad Jacobson

George P Sacco, Jr

Anthony B LaConti

William A Titterington

Stephen N Golovato

Paul Louis Consoli

Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition.

Method and apparatus for extracting ions from an ion source for use in ion implantation

The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

Method and apparatus for extending equipment uptime in ion implantation

Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

A vapor delivery system for delivering a steady flow of sublimated vapor to a vacuum chamber comprises a vaporizer of solid material, a mechanical throttling valve, and a pressure gauge, followed by a vapor conduit to the vacuum chamber. The vapor flow rate is determined by both the temperature of the vaporizer and the setting of the conductance of the mechanical throttle valve located between the vaporizer and the vacuum chamber. The temperature of the vaporizer is determined by closed-loop control to a set-point temperature. The mechanical throttle valve is electrically controlled, e.g. the valve position is under closed-loop control to the output of the pressure gauge. In this way the vapor flow rate can be generally proportional to the pressure gauge output. All surfaces exposed to the vapor from the vaporizer to the vacuum chamber are heated to prevent condensation.

Controlling the flow of vapors sublimated from solids

The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

Electrochemical cell stack comprises, in one embodiment, a plurality of cells arranged in series in a bipolar configuration, each cell including a proton exchange membrane (PEM), an anode positioned along one face of the PEM, and a cathode positioned along the other face of the PEM. A multi-layer metal screen for defining a first fluid cavity is placed in contact with the outer face of the anode, and an electrically-conductive, spring-like, porous pad for defining a second fluid cavity is placed in contact with the outer face of the cathode. The porous pad comprises a mat of carbon fibers having a density of about 0.2-0.55 g/cm. Cell frames are placed in peripheral contact with the metal screen and the compression pad for peripherally containing fluids present therewithin. Electrically-conductive separators are placed in contact with the metal screen and the compression pad for axially containing fluids present therewithin. A reinforcing cylinder made of metal or rigid plastic peripherally surrounds the plurality of cells and provides structural support to the cell frames as they expand radially due to increasing temperature and/or internal fluid pressure.

Reinforcement of multiple electrochemical cell frames for high-pressure operation

Compact proton exchange membrane (PEM) electrochemical cell stack. In a preferred embodiment, the cell stack comprises first and second sub-stacks of series-connected, proton exchange membrane (PEM) electrochemical cells. The first sub-stack is stacked between a top end plate and an intermediate plate, and the second sub-stack is stacked between the intermediate plate and a bottom end plate, the top end plate, the intermediate plate and the bottom end plate all extending beyond the peripheries of the first and second sub-stacks. A first set of tie rods is coupled to the top end plate and extends downwardly therefrom through the intermediate plate at points peripheral to the first and second sub-stacks, the first tie rods terminating prior to the bottom end plate. A Belleville washer spring stack is mounted on each of the first tie rods below the intermediate plate and above the bottom end plate for biasing the intermediate plate towards the top end plate. A second set of tie rods is coupled to the bottom end plate and extends upwardly therefrom through the intermediate plate at points peripheral to the first and second sub-stacks, the second tie rods terminating prior to the top end plate. A Belleville washer spring stack is mounted on each of the second tie rods above the intermediate plate and below the top end plate for biasing the intermediate plate towards the bottom end plate. The first and second sub-stacks may be electrically interconnected in series or in parallel.

Compact proton exchange membrane (PEM) electrochemical cell stack

A processing system for processing a substrate with a plasma comprises a processing chamber defining a process space including a support structure for supporting a substrate within the process space. A gas inlet in the chamber introduces a process gas into the chamber and a showerhead positioned within the chamber disperses process gas from the inlet. A supply of electrical energy biases the showerhead to form a plasma with process gas dispersed by the showerhead. First and second electrical insulator elements are positioned between the showerhead and the processing chamber, and are operable to electrically insulate the showerhead from the processing chamber. The first and second electrical insulator elements each have a passage therethrough for passing a process gas from the gas inlet through the insulator element and the respective passages of the insulator elements are laterally spaced from each other. A channel is formed in one of the elements and extends between the spaced passages to couple the passages together and form a complete passage through the first and second insulator elements for passing a process gas to the showerhead.

Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber

Controlled, low-turbulence venting of a semiconductor processing vacuum chamber is provided by a venting system including sensing elements for sensing gas conditions, including pressure, in the chamber during venting, and vent rate control elements, including a flow rate regulator valve, responsive to the sensing elements for attaining a venting rate approaching a selected maximal venting rate threshold of sonically choked flow, thereby attaining enhanced non-sonically-choked venting.

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Gloucester, MA, United States of America

Robert W Milgate, Iii