Massachusetts Institute of Technology

Kopin Corporation

Other

Robert W McClelland

John C Fan

Carl O Bozler

Paul M Zavracky

Brenda D Dingle

Jeffrey Jay Jacobsen

Mark B Spitzer

John C C Fan

Noa More Rensing

Paul Daniel Aquilino

Shambhu Shastry

Frederick J Leonberger

Ivars Melngailis

Ralph L Chapman

A torsional micro-mechanical mirror system includes a mirror assembly rotatably supported by a torsional mirror support assembly for rotational movement over and within a cavity in a base. The cavity is sized sufficiently to allow unimpeded rotation of the mirror assembly. The mirror assembly includes a support structure for supporting a reflective layer. The support structure is coplanar with and formed from the same wafer as the base. The torsional mirror support assembly includes at least one torsion spring formed of an electroplated metal. An actuator assembly is operative to apply a driving force to torsionally drive the torsional mirror support assembly, whereby torsional motion of the torsional mirror support assembly causes rotational motion of the mirror assembly. In another embodiment, a magnetic actuator assembly is provided to drive the mirror assembly. Other actuator assemblies are operative to push on the mirror assembly or provide electrodes spaced across the gap between the mirror assembly and the base. A process for fabricating the torsional micro-mirror is provided. The torsional micro-mirror is useful in various applications such as in biaxial scanner or video display systems.

Magnetically actuated torsional micro-mechanical mirror system

A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. The transfer includes the step of transferring the semiconductor regions onto a stretchable substrate. The resulting circuit panel can be incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Method of transferring semiconductors

Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/CaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

Method of making light emitting diode displays

Method of fabrication of a torsional micro-mechanical mirror system

Torsional micro-mechanical mirror system

A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is than incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Single crystal silicon arrayed devices for display panels

A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.

Method of producing sheets of crystalline material and devices made

A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Single crystal silicon transistors for display panels

Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

Method of making light emitting diode bars and arrays

A display panel is formed using a single crystal thin-film material that may be transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Growing community of inventors

Weymouth, MA, United States of America

Robert W McClelland