Cypress Semiconductor Corporation

Robert W Manning

James D Allan

Stefan-Cristian Rezeanu

Eric Wolf Gross

Vijay Srinivasaraghavan

Emad Hamadeh

An apparatus comprising a first circuit, a second circuit, and a third circuit. The first circuit may be configured to select (i) a read-back address signal or (ii) a data signal as an output signal in response to one or more first control signals. The second circuit may be configured to generate (i) the read-back address signal and (ii) a cycle identification signal in response to an internal address signal and one or more second control signals. The third circuit may be configured to generate one or more I/O control signals in response to the cycle identification signal, where the one or more I/O control signals may determine the format of the output signal.

Circuit, architecture and method for reading an address counter and/or matching a bus width through one or more synchronous ports

A block selecting scheme for a memory device. The block selecting scheme includes a sub word line driver circuit having multiple sub word line drivers and an inverter circuit. For one embodiment, the sub word line driver circuit includes four sub word line drivers. Each sub word line driver is used to select the sub word line for a corresponding memory block. Each of the sub word line drivers is coupled to a global word line via the inverter circuit. Furthermore, each of the sub word line drivers operates as an inverter. By coupling the global word line and each of the sub word lines via two inversion circuits, the global word line and the sub word lines are typically at the same voltage level. Thus, the deleterious effect of shorting between adjacent global word lines and sub word lines is substantially reduced. Furthermore, by grouping more than two sub word line drivers together, the overall die size of the memory device may be reduced.

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Monument, CO, United States of America

Robert W Manning