Intel Corporation

Robert W Heussner

Florian Gstrein

Ashish Agrawal

Dan S Lavric

Ying Pang

Padmanava Sadhukhan

Robert Niffenegger

Joel M Gregie

Integrated circuit structures having differentiated workfunction layers are described. In an example, an integrated circuit structure includes a first gate electrode above a substrate. The first gate electrode includes a first workfunction material layer. A second gate electrode is above the substrate. The second gate electrode includes a second workfunction material layer different in composition from the first workfunction material layer. The second gate electrode does not include the first workfunction material layer, and the first gate electrode does not include the second workfunction material layer. A third gate electrode above is the substrate. The third gate electrode includes a third workfunction material layer different in composition from the first workfunction material layer and the second workfunction material layer. The third gate electrode does not include the first workfunction material layer and does not include the second workfunction material layer.

Integrated circuit structures having differentiated workfunction layers

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Portland, OR, United States of America

Robert W Heussner