Motorola Corporation

Robert W Griffith, Jr

Michael P Norman

Lawrence R Gardner

A semiconductor wafer (40) is placed in a first pressure chamber (37) of a bonding apparatus (10 or 60). A major surface (46) of a submount (44) is placed on a submount support (30 or 62). The major surface (46) of the submount (44) seals the first pressure chamber (37). A pressure differential is generated between the first pressure chamber (37) and a second pressure chamber (47) The pressure differential bows a central portion of the submount (44) toward the semiconductor wafer (40). The central portion of the submount (44) contacts an adhesive coating over a central portion of the semiconductor wafer (40). The submount support (30 or 62) is displaced to decrease a curvature on the submount (44). The pressure differential is increased to an end-point to facilitate bond formation between the semiconductor wafer (40) and the submount (44).

Growing community of inventors

Mesa, AZ, United States of America

Robert W Griffith, Jr