USA as Represented by Secretary of the Navy

Other

Robert W Gedridge, Jr

Kelvin T Higa

Ralph Korenstein

Thomas J Groshens

Stuart Jc Irvine

A new compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound, which has the formula ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P. The process has the steps of: (1) reacting phosphorus trihalide, PX.sub.3, with tertiarybutyl Grignard reagent, ((CH.sub.3).sub.3 C)MgX, where X is a halide; (2) treating the resulting product with lithium dimethylamide, LiN(CH.sub.3).sub.2 to form a reaction mixture; and (3) recovering ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P from the reaction mixture.

Compound tertiarybutylbis-(dimethylamino)phosphine and a process for

A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiarybutylbis-(dimethylamino)phosphine is prepared by reacting a phosphorus trihalide, PX.sub.3, with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX. The resultant product is treated with lithium dimethylamide reagent LiN(CH.sub.3).sub.2. Tertiarybutylbis-(dimethylamino)phosphine is then recovered from the reaction mixture. Phosphorus-containing semiconductor materials are formed by chemical vapor deposition by means of bubbling a carrier gas through the new compound and then transporting the ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P with the carrier gas to a heated substrate. Additional elements from groups II, III, V, and VI of the periodic table are then deposited on the substrate to form the Phosphorus-containing semiconductor materials.

Use of tertiarybutylbis-(dimethylamino)phosphine in forming

Triisopropylindium ((CH.sub.3).sub.2 CH).sub.3 In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 10.sup.15 cm.sup.-3 and does not exhibit an appreciable memory effect.

Chemical vapor deposition of II/VI semiconductor material using

Triisopropylindium diisopropyltelluride adduct, ((CH.sub.3).sub.2 CH).sub.3 In:Te(CH(CH.sub.3).sub.2).sub.2 is synthesized and is used as a universal n-type dopant for both II/VI semiconductor materials as well as III/V semiconductor materials is disclosed. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations down to 10.sup.14 cm.sup.-3 and does not exhibit an appreciable memory effect.

Synthesis of triisopropylindium diisopropyltelluride adduct and use for

The new compound diisopropyl stibine is prepared by reacting an diisopropyl antimony halide with a hydride or deuteride transferring agent. The reaction is preferably carried out below about 0.degree. C., in an inert atmosphere, under darkened conditions. The diisopropyl stibine is used as a precursor in forming antimony-containing semiconductor material by chemical vapor deposition.

Preparation of diisopropyl stibines and use thereof

Chemical vapor deposition process for producing indium-containing semiconductor materials, particularly III/V indium-containing semiconductor materials, using triisopropylindium as the source of indium. In the process a flow of triisopropylindium and a flow of a group V source or precursor, e.g. AsH.sub.3, are directed into a reactor in contact with a heated substrate. The triisopropylindium and group V precursor are at least partially decomposed, depositing by chemical vapor deposition an indium-containing III/V semiconductor material on the substrate. The result is lower pyrolysis temperatures and less carbon impurity incorporation into the indium-containing semiconductor material than when commercially available indium sources are used.

Low temperature process for producing indium-containing semiconductor

The new compound tertiarybutyldimethylantimony is prepared by reacting an timony trihalide SbX.sub.3 with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX, treating the resulting product with the methyl Grignard reagent (CH.sub.3)MgX. where X is a halide, and recovering tertiarybutyldimethylantimony from the reaction mixture. The reaction is preferably carried out by a one pot synthesis in a suitable solvent such as diethyl either using approximately one equivalent of ((CH.sub.3).sub.3 C)MgX in relation to the SbX.sub.3 at about -50.degree. C., followed by treatment with approximately two equivalents of (CH.sub.3)MgX in relation to the SbX.sub.3 at about 0.degree. C. The tertiarybutyldimethylantimony is used as a precursor in forming antimony-containing semiconductor material by chemical vapor deposition.

Preparation of tertiarybutyldimethylantimony and use thereof

Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and II/VI semiconductor materials.

Low temperature process for producing antimony-containing semiconductor

Compounds and process for preparation and isolation of tetraorganyl tellum compounds including: tetraalkyl tellurium and tetraalkenyl tellurium. The products remain relatively stable in the absence of light and air.

Process for preparing tetra (organyl) telluride compounds

Compounds and process for preparation and isolation of tetraorganyl tellurium compounds including: tetraalkyl tellurium and tetraalkenyl tellurium. The products remain relatively stable in the absence of light and air.

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Ridgecrest, CA, United States of America

Robert W Gedridge, Jr