Other

Microelectronics and Computer Technology Corporation

Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd.

Ae Polysilicon Corporation

Robert W Froehlich

Richard D Nelson

David Anton Mixon

Thomas P Dolbear

Thomas Alan Bishop

Ernest R Nolan

Chung J Lee

York Tsuo

Mark R Breen

Randy L German

Diana C Duane

Kimcuc T Tran

Ben Fieselmann

Kathryn V Keswick

Todd H Herder

In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.

Methods and system for cooling a reaction effluent gas

In an embodiment, a reactor includes a section, wherein at least a portion of the section includes a base layer, wherein the base layer has a first composition that contains a silicide-forming metal element; and a silicide coating layer, wherein the silicide coating layer is formed by a process of exposing, at a first temperature above 600 degrees Celsius and a sufficient low pressure, the base layer having a sufficient amount of the silicide-forming metal element to a sufficient amount of a silicon source gas having a sufficient amount of silicon element, wherein the silicon source gas is capable of decomposing to produce the sufficient amount of silicon element at a second temperature below 1000 degrees Celsius; reacting the sufficient amount of the silicide-forming metal element with the sufficient amount of silicon element, and forming the silicide coating layer.

Reactor with silicide-coated metal surfaces

Compliant electrically connection bumps for an adhesive flip chip integrated circuit device and various methods for forming the bumps include the steps of forming polymer bumps on a substrate or an integrated circuit die and coating the polymer bumps with a metallization layer. The polymer bump forming step includes the steps of coating a polymer material on a substrate, curing the polymer and the etching the bump pattern from the polymer material. The overcoating step includes electrolessly plating a ductile metal such as gold on the polymer bump.

Compliant electrically connective bumps for an adhesive flip chip

A method of providing a thermally conductive connection between spaced surfaces includes (a) mixing a thermally conductive filler containing a liquid metal into an unhardened matrix material, and (b) contacting the unhardened matrix material and randomly dispersed, separate spaced non-solidified regions of filler within the unhardened matrix material to the surfaces. A solid mechanical bond may be provided by hardening the matrix material or by providing a separate adhesive between the surfaces. Preferably, the regions of filler form separate spaced continuous thermally and electrically conductive paths between the surfaces.

Thermally conductive connection with matrix material and randomly

The present invention discloses a thermally and electrically conductive adhesive material comprising a hardened adhesive, and a non-solidified filler containing a liquid metal dispersed in separate spaced regions of the adhesive. The hardened adhesive provides a mechanical bond whereas the filler provides continuous thermal and electrical metal bridges, each bridge extending through the adhesive and contacting the bonded surfaces. The method includes (a) dispersing a filler containing a liquid metal into an unhardened adhesive, (b) contacting the unhardened adhesive and the filler in non-solidified state to the surfaces resulting in separate spaced regions of the non-solidified filler contacting both surfaces, and (c) hardening the adhesive.

Thermally and electrically conductive adhesive material and method of

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Austin, TX, United States of America

Robert W Froehlich