Advanced Micro Devices Corporation

Robert W Bower

James Murray

Christopher O Schmidt

Stephen M Fuller

Jerry N Cunningham

Stewart B Bickley

Pre-assembled pallet-based bulk food display with divider

An improved integrated circuit structure is disclosed in which an active device is formed in contiguous portions of a single slot in an integrated circuit structure or substrate. The method of forming the single slot or merged slot device comprises forming a first portion of the slot, constructing at least a part of one element of the active device in this slot portion, and then forming one or more additional slot portions contiguous with the first slot portion, and constructing one or more further elements of the same active device in the additional contiguous slot portion or portions.

Integrated circuit structure with active device in merged slot and

An improved integrated circuit structure is disclosed which comprises a substrate having one or more active device slots with active elements of an active device formed therein and an isolation slot surrounding the one or more active device slots with an inner wall contiguous with the outer wall of the one or more active device slots. The active elements in the one or more active device slots are thereby in direct contact with isolation material in the isolation slot to thereby inhibit end effects.

Walled slot devices and method of making same

An improved bipolar slot transistor vertically formed in a slot in an integrated circuit structure is disclosed. The transistor is formed in a substantially vertical slot having an active base region formed beneath the bottom of the slot and comprises an active collector region formed beneath the active base region, a buried collector layer beneath the active collector region and in communication with a collector contact; an emitter region formed in the slot over the active base region; and extrinsic base regions formed adjacent to but insulated from the sidewalls of the slot communicating with the active base region and with base contact regions on the surface of the structure.

Vertical slot bottom bipolar transistor structure

A bipolar transistor susceptible to high level integration has its active regions formed in slots within a semiconductor substrate. In one embodiment, the emitter is formed within a slot and has a surrounding region doped to function as a base. A collector is formed in another slot which is located adjacent but spaced apart from the emitter slot. Carrier transport occurs principally horizontally between the emitter and base and then to the collector. Additional slots may be used to isolate the slot transistor in conjunction with a horizontally disposed pn junction and a buried collector. The collector may be formed in a slot which contains an oxidized outer sidewall that serves to isolate the individual transistor.

Integrated circuit structure with active elements of bipolar transistor

Slots of different types are fabricated using a single latent image mask. The slots of different types are thus located with respect to each other in a self-aligned relationship. In one embodiment an oxide of the semiconductor material, e.g., silicon dioxide, is used as a unitary masking layer. The slots of various types are defined in the mask and are fabricated in succession by relying on a universal etch and differential thicknesses for the oxide layers over slots of the different types. When the slots are formed they are filled with a suitable material. In another embodiment at least a dual layer latent image mask is used in which the two materials have different etch properties. One layer is used as a stop etch layer during fabrication of one of the slot types.

Process for forming slots of different types in self-aligned

A slot formation process is provided in which the regions near the mouth of the slot are coated, while the slot is being formed, with a material which is resistant to the etchant being used to form the slot. The coating may be applied continuously or may be applied at specific points in the slot formation process. During the formation of the middle and bottom regions of the slot the coated upper regions retain a nearly vertical contour shape since they are protected from undesired etching by ions whose trajectories have been impacted by charge accumulations at the mouth of the slot. The coating material may be a thin oxide layer of the semiconductor material or may be a layer of an appropriate etch resistant material.

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Los Gatos, CA, United States of America

Robert W Bower