Other

Epir Technologies, Inc.

Robert W Bower

Sivalingam Sivananthan

James K Garland

Michael Carmody

Shubhrangshu Mallick

James Murray

Stephen M Fuller

Stewart B Bickley

Jerry N Cunningham

Wei D Bower

Michael S Bower

A method for passing photovoltaic current between a subcell formed from a single crystal Group ll-VI semiconductor material and a subcell formed from a single crystal Group IV semiconductor material, includes the steps of forming a first subcell by an epitaxial growth process, the first subcell having a first upper surface; forming a tunnel heterojunction between the first subcell and the second subcell, and tunneling carriers formed by light incident on the first and second subcells through the tunnel heterojunction, thereby permitting a photoelectric series current to flow through the first and second subcells.

Method for passing photovoltaic current between a subcell formed from a group II-VI semiconductor material and a subcell formed from a group IV semiconductor material

A Light Floatable Structure is attached to the footprint of a Mobile Electronic Device when near an area where the device might be dropped accidentally into water or other similar liquid where the device might sink. The attached Light Floatable Structure provides the buoyancy needed to prevent the Mobile Electronic Device and attached Light Floatable Structure from sinking. The dimensions and shape of this This Light Floatable Structure are confined to the length and width of the footprint of the Mobile Electronic Device to preserve its feel and adheres to the Mobile Electronic Device with an interface that allows easy attachment and removal of the Light Floatable Structures from the Mobile Electronic Devices when desired.

Float mobile

A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel heterojunction interposed between the first and second subcells. A first side of the tunnel heterojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type, is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel heterojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type, and is comprised of a highly doped Group II-VI semiconductor material. The tunnel heterojunction permits photoelectric series current to flow through the subcells.

Tunnel heterojunctions in Group IV/Group II-IV multijunction solar cells

The disclosed device is based on the Thompson submachine gun. The disclosed device is specifically designed to only fire blanks, or a firearm cartridge that contains gunpowder but no bullet, shot, or projectile. Blanks can be fired in fully automatic fashion, just as a standard machine gun. Numerous features are disclosed that prevent the disclosed device from being modified to fire live cartridges. The result is a blank-firing device with the appearance of a genuine firearm, while being unable to fire live cartridges, and thus not regulated by state or federal laws, or regulations to possess, use, and/or transfer.

Blank-firing device with anti-tampering features

A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel homojunction interposed between the first and second subcells. A first side of the tunnel homojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type and is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel homojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type and also is comprised of a highly doped Group IV semiconductor material. The tunnel homojunction permits photoelectric series current to flow through the subcells.

Tunnel homojunctions in group IV / group II-VI multijunction solar cells

Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by bandgap recombination.

Light emission from semiconductor integrated circuits

A method for producing wafer splitting from ion implantation into silicon after low temperature direct bonding with surface roughness that is &#x2dc;1 nm (RMS). This result is an order of magnitude smoother than the previous work (&#x2dc;10 nm RMS). The key improvement in this work is the use of a low temperature bond resulting in a strong bond before the material is cut. The smooth as-split surfaces produced using a low temperature bond are very important for creation of very thin (&#x3c;50 nm) silicon-on-insulator (SOI), three-dimensional bonded structures and nanostructures that are split after processing.

Smooth thin film layers produced by low temperature hydrogen ion cut

A method for the transposed splitting of ion cut materials. Acceptor centers are formed and selectively introduced into a solid material. In addition, atoms are introduced into the solid material at a location that is offset spatially from acceptor centers. The atoms introduced into the solid material are then transported to the location of the acceptor centers where they will then condense in the region of the acceptor centers. As a result, then any expunged layer that is formed by ion splitting as result of the atoms being introduced into the solid material will follow the contour of the location of the acceptor centers, and will thus be transposed from the initial location of the atoms introduced into the solid material.

Transposed split of ion cut materials

A method for the transposed splitting of ion cut materials. Acceptor centers are formed and selectively introduced into a solid material. In addition, atoms are introduced into the solid material at a location that is offset spatially from acceptor centers. The atoms introduced into the solid material are then transported to the location of the acceptor centers where they will then condense in the region of the acceptor centers. As a result, then any expunged layer that is formed by ion splitting as result of the atoms being introduced into the solid material will follow the contour of the location of the acceptor centers, and will thus be transposed from the initial location of the atoms ;introduced into the solid material.

A pallet-based shipping container and display stand is disclosed which is free-standing and generally square in shape. The container comprises a pallet base, a lower tray, a medial divider within the tray and a plurality of boxes stacked on either side of the divider within the tray. The divider has one or more packaging containers to hold packaging which can be used by consumers. In the shipping configuration, the container is braced and topped with a cap. In the display configuration, the cap is removed and discarded and a display board erected in the divider. A method of shipping and displaying small products using a pallet-based shipping container and display stand.

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Anacortes, WA, United States of America

Robert W Bower