The United States of America As Represented by the United States

Sandia Corporation

The United States of America As Represented by the Department of Energy

Robert W Bickes, Jr

Alfred C Schwarz

Mark C Grubelich

David A Benson

Robert S Blewer

Lloyd L Bonzon

Philip L Stanton

Paul D Wilcox

Michael R Kopczewski

Kevin D Marbach

Anita M Renlund

A new approach to scabbling of surfaces of structural materials is disclosed. A layer of mildly energetic explosive composition is applied to the surface to be scabbled. The explosive composition is then detonated, rubbleizing the surface. Explosive compositions used must sustain a detonation front along the surface to which it is applied and conform closely to the surface being scabbled. Suitable explosive compositions exist which are stable under handling, easy to apply, easy to transport, have limited toxicity, and can be reliably detonated using conventional techniques.

Explosive scabbling of structural materials

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

Semiconductor bridge (SCB) detonator

A detonator for high explosives initiated by mechanical impact includes a cylindrical barrel, a layer of flyer material mechanically covering the barrel at one end, and a semiconductor bridge ignitor including a pair of electrically conductive pads connected by a semiconductor bridge. The bridge is in operational contact with the layer, whereby ignition of said bridge forces a portion of the layer through the barrel to detonate the explosive. Input means are provided for igniting the semiconductor bridge ignitor.

SCB initiator

A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose.

Tungsten bridge for the low energy ignition of explosive and energetic

A non electrically conductive substrate includes both an SCB and a semiconductor switch, the switch being electrically connected to cause the SCB to fire when the switch is triggered.

Smart explosive igniter

Semiconductor bridge (SCB) igniter

The invention is a detonator for use with high explosives. The detonator comprises a pair of parallel rail electrodes connected to a power supply. By shorting the electrodes at one end, a plasma is generated and accelerated toward the other end to impact against explosives. A projectile can be arranged between the rails to be accelerated by the plasma. An alternative arrangement is to a coaxial electrode construction. The invention also relates to a method of detonating explosives.

Growing community of inventors

Albuquerque, NM, United States of America

Robert W Bickes, Jr