Cabot Microelectronics Corporation

Robert Vacassy

Dinesh N Khanna

Alexander William Simpson

Phillip W Carter

Timothy P Johns

Shoutian Li

Renjie Zhou

Benjamin P Bayer

Zhan Chen

Gregory H Bogush

Dinesh Khanna

Jaishankar Kasthuri

George Fotou

Farhana Khan

Kai Luo

The invention provides a chemical-mechanical polishing pad comprising a polymeric matrix and 0.1-15 wt. % of metal oxide particles. The polymeric matrix has pores, the metal oxide particles are uniformly distributed throughout the pores, and the metal oxide particles have a specific surface area of about 25 m/g to about 450 m/g. The invention further provides a method of polishing a substrate with the polishing pad.

CMP porous pad with particles in a polymeric matrix

Disclosed is a polishing pad for chemical-mechanical polishing. The polishing pad has a porous interface and a substantially non-porous bulk core. Also disclosed are related apparatus and methods for using and preparing the polishing pad.

Polishing pad with porous interface and solid core, and related apparatus and methods

An aqueous chemical-mechanical polishing composition for polishing metal containing substrates comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about &#x2212;5 mV to about &#x2212;100 mV. The composition can be used to polish the surface of a tungsten containing substrate.

CMP method for metal-containing substrates

The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.

Compositions and methods for dielectric CMP

The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

Polishing composition for a tungsten-containing substrate

The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.

Tunable selectivity slurries in CMP applications

Method of polishing a tungsten-containing substrate

The invention provides a polishing composition comprising (a) a silica abrasive, (b) methanol, and (c) a liquid carrier, wherein the polishing composition has a pH of about 1 to about 6, and the polishing composition is colloidally stable. The invention also provides a method for polishing a substrate comprising a silicon-based dielectric layer using the polishing composition. The invention further provides a method of stabilizing a silica abrasive in a polishing composition by contacting the abrasive with methanol.

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Aurora, IL, United States of America

Robert Vacassy