Matheson Tri-gas, Inc.

International Business Machines Corporation

Alliance for Sustainable Energy, LLC

Robert Torres, Jr

Joseph V Vininski

Carrie L Wyse

Tadaharu Watanabe

Mark Raynor

Andrew Millward

Glenn Mitchell

Alexander Reznicek

Devendra K Sadana

Hong He

Thomas N Adam

Dan Fraenkel

Hans Heinrich Funke

Virginia H Houlding

Satoshi Hasaka

Teresa M Barnes

Daniel Tempel

Larry Wagg

Xiaonan Li

Tim Gessert

Adam Seymour

Paul D Brabant

Junpin Yao

Joseph Giagnacova

Praveen Jha

Stuart Muller

Harold G Spicer

Hideharu Shimizu

Tadaharu Wantanbe

Dan Davia

Ramkumar Subramanian

Joseph Vivinski

David Lawrence

Terry Arthur Francis

Belgin Yucelen

Mark W Raynor

Carrie Wyse

Daniel J Tempel

The present invention generally relates to methods and apparatuses adapted to perform additive manufacturing (AM) processes and the resulting products made therefrom, and specifically, to AM processes that employ an energy beam to selectively fuse a base material to produce an object. More particularly, the invention relates to methods and systems that use reactive fluids to actively manipulate the surface chemistry of the base material prior to, during and/or after the AM process.

Use of reactive fluids in additive manufacturing and the products made therefrom

The molecular etcher carbonyl fluoride (COF) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as 'materials'). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CF) and/or an oxide of carbon (CO) to a nitrogen trifluoride (NF) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF. The NFmay be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber. The additive(s) may be introduced upstream or downstream of the remote plasma such that both NFand the additive(s) (and any plasma-generated effluents) are present in the CVD chamber during cleaning.

In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use

The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550&#xb0; C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material

Methods of cleaning a processing chamber with nitrogen trifluoride (NF) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into the chamber. The NFmay be excited in a plasma inside the chamber or in a remote plasma region upstream from the chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NFand the reactive diluent (and any plasma-generated effluents) are present in the chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF.

[object Object]

Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Fluorine compounds for doping conductive oxide thin films

A method of reducing moisture in a fluorine-containing gas is described. The method may include the steps of providing a purifier material that includes elemental carbon, and flowing the unpurified fluorine-containing gas having an unpurified moisture concentration over or through the carbon-based purifier material. At least a portion of the moisture is captured in the purifier material so that a purified fluorine-containing gas that emerges downstream of the purifier material has a reduced moisture concentration that is about 50% or less of the unpurified moisture concentration.

Purification of fluorine containing gases and systems and materials thereof

Embodiments of the invention provide an electronic device which may include an interior compartment housing at least one electronic component that may be reactive to target impurities. The electronic component may include at least a cathode and an anode. A purifier material may be interspersed within a conducting polymer layer between the cathode and the anode. The purifier material may decrease target impurities within the interior compartment of the electronic device from a first level to a second level.

Methods and materials for the reduction and control of moisture and oxygen in OLED devices

A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.

Fluid storage and purification method and system

A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A polymerized polymeric material is provided within the vessel. The fluid is contacted with the polymerized polymeric material for take-up of the fluid by the polymerized polymeric material. The fluid is released from the polymerized polymeric material and dispensed from the vessel.

Polymerized polymeric fluid storage and purification method and system

Novel uses and methods of use for inorganic and macroreticulate polymer bonding to metals to control moisture and oxygen in OLED, and other like devices, are provided. Materials having color change capacity are also provided for the removal of moisture from an OLED, where the material changes color upon reaching its capacity and thereby signals the user that the OLED is no longer protected from moisture damage.

Fluid storage and purification method

A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel.

According to the invention, an apparatus to characterize leaks in a fluid storage container is disclosed. The apparatus may include a valve coupler, a gas manifold and a processor. The valve coupler may couple the apparatus with a closed valve on the fluid storage container. The gas manifold may be coupled with the valve coupler and may include a first branch connected with a gas monitoring device. The gas monitoring device may scan for a plurality of gases that may be emitted by the closed valve of the fluid storage container. The processor may be operable to receive gas monitoring device data representing masses for one or more of the plurality of gases detected by the monitor.

Leak characterization apparatuses and methods for fluid storage containers

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Parker, CO, United States of America

Robert Torres, Jr