Globalfoundries Inc.

Robert Teagle

Ajey Poovannummoottil Jacob

Xiuyu Cai

Mark V Raymond

Catherine B Labelle

Linus Jang

Christopher Michael Prindle

Daniel T Pham

One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrificial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the sidewall spacers, removing the sacrificial gate structure to define a replacement gate cavity positioned between the sidewall spacers, forming a replacement gate structure in the replacement gate cavity, forming a tensile-stressed gate cap layer above the replacement gate structure and within the replacement gate cavity and, after forming the tensile-stressed gate cap layer, removing the tensile-stressed layer of insulating material.

Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices

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Hopewell Junction, NY, United States of America

Robert Teagle