International Business Machines Corporation

Robert T Villetto, Jr

George R Goth

Thomas A Hansen

Timothy W Carr

Charles D Needham

John R Galie

Disclosed is the use of metal silicide (e.g. Pt-Si) contacts in boron lightly doped P.sup.- type silicon between two contiguous but not adjacent N.sup.+ type regions instead of employing the usual P.sup.+ implanted or diffused channel stoppers. The invention finds a particularly interesting application in polyimide filled deep trench isolated integrated circuits. The trench sidewalls are coated with an insulating material which is removed from the trench bottom at the all contact etch step. The Pt-Si is formed at the bottom of the trenches at the same time that the device contacts are made.

Metal silicide channel stoppers for integrated circuits and method for

The present method discloses the steps to form metal device contact studs between regions of a semiconductor device, such as an NPN vertical bipolar transistor, and the first level metal, the studs overlapping both a contact region (such as the base or the collector) and an adjacent polyimide-filled trench. The method is comprised of the following steps:

Method for making metal contact studs between first level metal and

A process for etching deep trenches to achieve dielectric isolation for integrated circuit devices; the process insures obtaining substantially perfectly vertical trench walls by precluding significant variation in etch bias during the trench formation.

Growing community of inventors

Poughkeepsie, NY, United States of America

Robert T Villetto, Jr